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By R. W. Cahn, C. D. Graham

Two predictions of the oriented growth theory of recrystallization textures have been tested by measuring the orientation dependence of the rate of growth of a single grain into a strained single crystal of aluminum, and determining the orientations of artificially and spontaneously nucleated grains growing preferentially into strained aluminum single crystals. Growth rates are found to be insensitive to orientation, except that new grains with orientations similar to the matrix or to a twin of the matrix have very low mobilities. Similarly, new grains growing preferentially into a strained crystal have random orientations, except that orientations near that of the matrix or its twins are avoided. The predictions of oriented growth theory are thus not confirmed. BASICALLY, the oriented growth theory of re-crystallization textures1 rests on the assumption that the rate of growth of a recrystallizing grain depends strongly on the orientation of the growing grain relative to the strained matrix into which it grows. In particular, the theory holds that in face-centered-cubic metals the orientation which corresponds to maximum growth rate is one in which the growing grain and the matrix are related by a rotation about a common <111> direction. The amount of rotation, as derived from several kinds of experiments,2-1 has been assigned various values, generally in the range between 20" and 40". (A <111> rotation of 60" is a twin relationship.) The conclusion that boundary migration rates depend strongly on orientation is based almost entirely on indirect evidence; there have been very few direct measurements of boundary migration rates as a function of orientation.* " The present investigation was undertaken to provide such measurements, to help make possible a decision between the oriented growth and oriented nilcleation theories of recrystal-lization textures. The basic experimental program consisted of measuring the rate of growth of a single recrystal-lizing grain consuming a strained single crystal, with the orientations of both grains preselected so that the effect of orientation on growth rate could be determined. A prerequisite for such an experiment is a strained single crystal which will support the growth of a new grain but which will not spontaneously nucleate new grains on heating. That is, the crystal must support the growth of a grain nucleated artificially, but contain no recrystalliza-tion nuclei which will become active at the testing temperature. Beck was apparently the first to note that such a condition could exist," and to make use of the condition for am experiment of the type described here.&apos; The present work was actually suggested, however, by a report of Tiedema". " that an aluminum single crystal strip, oriented with a (111) plane in the plane of the strip and a < 112> direction parallel to the tensile axis, would not recrystallize after 20 pet extension even when heated almost to the melting point, provided that the strip was heavily etched before being heated. This result could not be duplicated in the present work. In fact, it was found that any crystal which deformed in multiple slip (<100>, <112> and <111> orientations) underwent spontaneous nucleation after 15 pet extension, even if etched. However, crystals which deformed in single slip, and which did not develop heavy deformation bands, could be extended 15 pet without showing spontaneous nucleation at temperatures up to 600°C. Crystals oriented within about 10o of <110> which developed heavy deformation bands could be extended 10 pet without showing spontaneous nucleation. In all cases a heavy etch was required to prevent nucleation. Etching was necessary because of the presence of an oxide layer on the crystal surface at the time of straining, which leads to preferential nucleation at the surface.&apos;&apos; Grain Growth Rates Experimental Procedure and Results—Aluminum strips of 99.6 pet purity (principal impurities 0.19 pet Fe and 0.12 pet Si), 1 mm by 1 cm in cross section, were grown into single crystals of controlled orientation by the strain-anneal method of Fuji-wara.&apos;"&apos; " A sharp temperature gradient was maintained in the strips during growth by lowering them into a salt bath controlled at 650°C. Crystal orientations were determined by the etch-pit method of Barrett and Levenson" to an accuracy of ±2O. The crystals were extended by 10 or 15 pet in a simple hand operated tensile machine. Crystal orientations were rechecked after extension, and were found to be in agreement with the orientations predicted by the formula of Schmid and Boas." After extension, the grip ends of the single crystal specimen were cut off with a jeweller&apos;s saw, and the crystal heavily etched (at least 20 pet wt loss) in hot 10 pet Na or KOH solution. A region of severe local deformation was then introduced at one corner of the strip, usually by cutting off the corner with shears. Heating this end of the strip caused a large number of new grains to nucleate at the sheared edge. One of these grains grew to occupy the full width of the strip. The appearance of the strip at

Jan 1, 1957

By J. W. Cuthbertson, R. A. Cresswell

THE constitution of Cu-rich alloys with 1.5 to 13.5 pct Sn and 0.25 to 3.0 pct Be and the precipitation-hardening characteristics of alloys with 1.5 to 13.5 pct Sn and 0.25 to 1.0 pct Be have been examined. The hardness and tensile strength of the alloys examined increase markedly after solution treatment at 700°C followed by heat treatment at temperatures between 200" and 450°C. By a combination of cold work and heat treatment, hardness values similar to those exhibited by commercial Be-Cu alloys containing 2.25 pct Be can be obtained with ternary alloys containing 9 pct Sn and 0.75 pct Be and containing 10 pct Sn and 0.5 pct Be. Marked hardening effects occur with alloys containing even less beryllium. By heat treatment alone, a hardness value of 310 diamond pyramid hardness can be obtained from an alloy containing 10 pct Sn and 0.75 pct Be. Preliminary tensile tests have shown that an ultimate tensile strength of 110,000 psi with an elongation of 23 pct is obtainable by precipitation hardening an alloy with 8 pct Sn and 0.75 pct Be. The precipitation-hardening process has been followed microscopically for certain alloys and the inference is that, while the initial hardening effect is probably explained by the precipitation of the ß phase of the Cu-Be system, further hardening, proceeding at a much slower rate, also occurs, apparently as a result of precipitation of phases of the Cu-Sn system, particularly precipitation of the 6 phase at temperatures below 350". The presence of the e phase of the Cu-Sn system in certain alloys at temperatures below 350°C has been confirmed. Tin-bronzes are widely used in engineering applications where a combination of high strength and good resistance to corrosion is wanted. The maximum strength is induced in these alloys by cold working, and it would be an advantage for many purposes if high strength could be achieved alternatively by an age-hardening process. While Cu-Sn alloys have a good fatigue resistance they can be surpassed in this respect by Cu-Be, but the use of the latter alloy is limited by its high cost. If, by adding beryllium to tin-bronze, the properties of the respective binary alloys could to some extent be combined, a most attractive alloy should result. As pointed out by Raynor,¹ beryllium is on the borderline of the zone of favorable size factors for copper, and the solid solubility of beryllium in copper is consequently much more restricted than if the size factor were strongly favorable. The size factor is sufficiently favorable, however, to permit an increase in solid solubility with rise in temperature, and there is thus a composition range in which CU- Be alloys are susceptible to hardening by precipitation heat treatment. Although the a phase of the Cu-Sn system is similarly susceptible to precipitation treatment, the time necessary to establish equilibrium in commercial alloys of this type is usually so great that age hardening becomes impracticable. The addition of beryllium to Cu-Sn alloys would appear to offer a means of conferring on the latter useful age-hardening properties. Masing and Dahl² and others have, in fact, shown that the addition of beryllium to Cu-Sn a solid solutions renders these alloys susceptible to precipitation hardening and after such hardening confers on them an encouraging improvement in physical properties. If this improvement could be achieved by the addition of substantially smaller amounts of beryllium than are customarily found in binary Cu-Be alloys, the ternary alloys should possess economic advantages which might make them more attractive than the binary alloy for some applications. Binary Systems Copper-Tin: The constitution of these alloys is now reasonably well known and is summarized in the equilibrium diagram published by Raynor.³ The following observations, due to Raynor,¹ on the structure of those phases of the Cu-Sn system that are likely to be found in the ternary alloy system will facilitate the subsequent discussion on the examination of that system. The ß phase is an electron compound at the electron-atom ratio 3:2 and has a body-centered cubic crystal structure. This phase is stable only down to 586°C, at which temperature it decomposes eutectoidally into the a and y phases. The y phase has a structure that is also based on the cubic system. This phase is stable down to 520°C, at which temperature it decomposes eutectoidally into the a and d phases. The d phase is an electron compound (Cu³¹Sn8) which has a crystal structure analogous to that of 7 brass. This phase is stable from 590" to 350°C; on prolonged annealing at the latter temperature it breaks down into a mixture of the a and E phases. The e phase is an electron compound (Cu³Sn) having the electron-atom ratio 7:4. Its structure may be regarded as a superlattice based on the close-packed hexagonal system. This phase is stable from 676°C to room temperature. The primary solid solubility of tin in copper increases to a maximum of 15.8 pct as the temperature falls from that of the peritectic reaction to 586°C. The solid solubility remains constant from 586" to 520°C. At lower temperatures the solubility decreases progressively. Below 350°C the fall in solubility is pronounced and is associated with the precipitation of the e phase. This precipitation is very sluggish and does not normally occur under service conditions. Copper-Beryllium: The Cu-Be system has been investigated by Borchers&apos; and others. Raynor5 summarized the present state of information on it.

Jan 1, 1952

By H. R. Ogden, E. S. Bartlett, A. G. Imgram

Unmodified disilicide coatirigs were applied to sheet-tensile specimens ofCb-Dg3 and Mo-TZM veJractovy- metal alloys. Coating thickness, degree of coating-substrate interdiffusion, and specimen geonzetry (notched and plain were included in the variables studied. Tensile tests were made to determine the ductile-lo-brittle transition temperature. The disilicide coating modestly increased the transition temperatlre of TZM, but had no effect on 043. Neither material condition (recrystallized or stress-velieved) nor specimen geometry (notched or unnotched) significantly altered the effects of coatings on the transilion temperatures of. the alloys. Cracks in the brittle coatings did not propagate into the substrate, and fracture modes appeared to be the same for both un-coated and coated specimens. MOST potential structural applications for refractory metals and alloys involve exposures to oxidizing environments at elevated temperatures. The general lack of oxidation resistance of these metals will require protective coatings to allow fulfillment of their potential. Currently preferred coatings for the oxidation protection of refractory metals are brittle intermetallic aluminides or silicides. These are typically formed on the surface of the refractory-metal substrate by a diffusion reaction between the substrate and a gaseous or liquid medium that is rich in aluminum or silicon. Because of the brittleness of these coatings, they will sustain no plastic deformation at low temperatures. They are frequently cracked by cooling from the coating temperature because of the thermal-expansion mismatch with the substrate alloy. Even if they survive cooling intact, they crack rather than sustain deformation under load at low temperatures. Thus, when a coated refractory metal is strained beyond the elastic limit of the coating at low temperatures, the mechanical environment of the substrate would include both static and dynamic cracks. These might be expected to influence the flow and fracture behavior of the substrate. This could be manifested in an altered fracture mode and/or an increase in the normal ductile-to-brittle transition temperature of the refractory-metal substrate. This paper presents the results of a research program that was conducted to determine the influence of the presence of a brittle surface coating on the low-strain-rate tensile behavior of typical refractory metals at low temperatures. EXPERIMENTAL PROCEDURES Material Preparation. Thirty-mil-thick sheets of molybdenum TZM alloy (Mo-0.5Ti-O.1Zr) and colum-bium D43 alloy (Cb-IOW-1Zr-O.1C) were obtained commercially. These alloys were selected as substrate materials representing two classes of materials important in current refractory-metal technology. The TZM was in the stress-relieved condition, and exhibited a heavily fibered grain structure. The D43 had been processed by the duPont "optimum" fabrication schedule,&apos; and exhibited slightly elongated grains typical of this process. Tensile specimens of two geometries were prepared from these materials: 1) plain specimens with 0.2-in.-wide 1.0-in.-long gage sections; 2) specimens similar to above, but with a 0.06-in.-diam hole drilled in the center of the gage section, providing a stress concentration factor, Kt, of 2.5. The "notch" geometry was selected to represent a typical condition of a rivet hole or other geometric discontinuities as might be encountered in various applications. Machined specimens were degreased, with a final rinse in acetone, prior to the application of coatings. Specimens of each substrate and configuration were pack-siliconizedin a particulate mixture of 80 pct A1203, 17 pct Si, and 3 pct NaF. Specimens were embedded in this mix (contained in graphite retorts) and coated in an electrically heated argon-atmosphere furnace under time-temperature conditions to effect nominal 1- and 3-mil-thick silicide coatings: Coating Thickness, mils Thermal Treatment 0.6 to 1.4 24 hr at 982°C 2.4 to 3.2 48 hr at 1093°C Coating kinetics were similar for both the TZM and D43 substrates. These treatments had little or no visible effect on the substrate microstructure as determined by optical metallography. The coatings on TZM were essentially single-phase unmodified disilicides, while those on D43 showed substantial evidence of modification by proportionate reaction with the respective substrate elements or phases, as shown in Fig. 1. It was recognized that these coatings might not be particularly desirable regarding protective capability. However, it was desired to circumvent possible inter -ferring chemical interaction with the substrate by pack additives such as chromium, titanium, boron, aluminum, and other elements that typify the better protective coatings for these materials.&apos; Thus, the results presented apply specifically to the simple silicide coatings investigated. They may not be rep-

Jan 1, 1967

By R. D. Nelson, J. C. Shyne

The ß and a ß transformations in plutonium were studied with particular emphasis on the transformation kinetics and microstructure. Significant observations are: 1) The kinetic data show conclusively that the ß — a transformation in high-purity plutonium can proceed isothermally with no athermal component. 2) Plastic deformation of the stable (3 phase retards the subsequent (3 — a transformation. 3) Plastic deformation of the stable a phase accelerates the a — ß transformation; the acceleration is attributed only to residual stresses. 4) The a and a?a volume changes occur anisotroPically in textured plutonium. 5) An apparent crystallogvaphic relationship exists between the parent and the product phases of the and (3 — a transformations. 6) Both applied uniaxial compressive stresses and uniaxial tensile stresses raise the starting temperature for the ß — a transformation. 7) A given uniaxial tensile stress favors the a — ß transformation more than an equivalent applied uniaxial compressive stress opposes the transformation. These observations of the (ß —a and a — ß phase changes in plutonium are consistent with known mar-tensitic transformations. ThIS paper elucidates some of the characteristics of the a— ß and ß —a transformations in plutonium. Because considerable conjecture exists about the mechanisms by which the phase transformations occur in plutonium, experiments have been performed to provide indirect information concerning the mechanisms responsible for the a —ß and ß -a transformations. Indirect information is of particular value in the study of plutonium because of the experimental difficulties presented by the metal. Single crystals have not been produced in any of the allotropes. The large density results in high X-ray and electron-absorption factors and consequently complicating X-ray and electron diffraction. The kinetics of ß — a and a — ß transformations of plutonium and the behavior of the transformations under a variety of conditions have been investigated in detail. Information about the mechanisms of the allo-tropic transformations of plutonium was obtained indirectly from three sources: 1) the effect of plastic deformation of the stable parent phase upon the transformation kinetics; 2) the behavior of the metal transforming under applied stresses; and 3) the microstruc-tural and crystallographic features between parent and product phases. PHASE-TRANSFORMATION CHARACTERISTICS In characterizing solid-state phase transformations in metals and alloys, it is useful to define several types of transformations. An aim of the present work was to identify the low-temperature transformations in plutonium by type, i.e., as martensitic or nonmar-tensitic. Practical definitions for these terms follow. The terms commonly used to categorize phase transformations lack universally accepted definitions. This confusion arises doubtlessly because some terms specify crystallographic or morphological character while other words have a kinetic or a thermodynamic connotation. For example, martensitic specifies certain definite crystallographic restrictions. Unfortunately, martensitic is sometimes used in an ill-defined way to imply kinetic characteristics. Further confusion attends the use of such expressions as nucleation and growth, diffusional, and massive. From time to time new systems of phase-transformation nomenclature are suggested; unfortunately none of these has gained general acceptance.1,2 The authors of the present paper have no intention of entering the controversy. We recognize that some readers may object to the nomencliture used here. For exampie, the terms military and civilian have recently been used in much the same way as martensitic and non-martensitic are used in this paper. This paper is intended to describe several specific details of the low-temperature phase transformations in plutonium. The authors have found it useful to identify these transformations as martensitic; the term was chosen as the best available to describe the experimentally observed features of the transformations studied. A martensitic transformation is one that occurs by the cooperative movement of many atoms; the rearrangement of atoms from parent to product crystal structure occurs by the passage of a mobile semico-herent growth interface. The geometric features characteristic of a martensitic transformation are a specific orientation relationship between the product and parent phase lattices, a specific habit-plane orientation for the growth interface, and a shape change with a specifically oriented shear component. There is no alloy partition between the parent and product phases in a martensitic transformation. Martensitic transformations may display either athermal kinetic behavior or thermally activated isothermal kinetic behavior. Some martensitic transformations occur isothermally, although more commonly martensitic transformations are athermal. Isothermal martensitic transformations are suppressible by rapid cooling. In athermal martensitic transformations, nucleation and growth are not thermally activated and the transformations are essentially time-independent. Nucleation, growth, or both can be thermally activated in isothermal martensitic reactions. Transformation of the parent phase into a marten-

Jan 1, 1967

Jan 1, 1924

By K. Brack, G. H. Schwuttke

Annealing properties of subszerface amorphous lavers produced through high-energy ion implantation in silicon are studied. The buried layers are produced through the implantation of ions (nitrogen), ranging in energy from 1.5 to 2 mev. X-ray interference patterns, transmission electron microscopy, and resistivity profiling are used to study the annealing characteristics of the ion damage. The annealing experiments indicate a low temperature (below 700°C) and a high temperature (above 700°C) region. Significant changes occur in the amorphous layer during the high-temperature anneal. Such changes are corre-lated with the re crystallization of the amorphous silicon and the formation of subsurface (buried) silicon-nitride films. TODAY&apos;S main problems in the field of ion implantation are related to the accurate determination and prediction of 1) the distribution profiles of implanted ions, 2) the lattice sites occupied by the implanted ions, 3) the lattice damage produced through ion implantation, and 4) the annealing characteristics of damage centers in the lattice. This paper reports investigations concerned with the problems listed under 3) and 4). EXPERIMENTAL Our investigations cover the energy range of incident ions from 100 to 300 mev and from 1 to 2.5 mev. The emphasis of this study is on the energy range from 1.5 to 2 mev. The experiments are conducted with single charged nitrogen ions. To implant the ions a van de Graaff generator is used as described by Roosild et al.1 Accordingly, a gas containing the desired ion specie is passed through a thermome-chanical leak into a radio frequency activated source. The positive ions are driven into the van de Graaff with the help of a variable voltage probe. Emerging from the accelerator the ions drift into a magnetic analyzing system and here the desired ion specie is bent 90 deg into the exit port. The ion beam leaving the analyzer is defocused and drifts down a 4-ft long tube to hit the silicon target. At this position the 20 pamp ion beam has a circular cross-section of 2.1 cm. N2 is used as a source gas for nitrogen ions. The implantation target is silicon with zero dislocation density, 2 ohm-cm resistivity, (111) orientation, mechanically-chemically polished, and 1 mm thick. The target is mounted on a water-cooled heat sink and kept at room temperature. A fluence of 1015 to 1016 ions per sq cm is used. RESULTS 1) Silicon Perfection after Bombardment. High-energy ion bombardment of silicon has some striking effects on lattice perfection. Some results were reported in detail previously at the Santa Fe conference2 and are here briefly summarized for the benefit of the experiments described in the following. 1.1) Identification of Surface Films on Silicon. After bombardment all samples are found to be coated with surface films. The films on the silicon surface vary in thickness and color; they can be transparent, slightly brown, or opaque. The films are thicker and darker in the high-intensity area of the beam and they delineate the bombarded surface area of the crystal. The films produce electron diffraction patterns characteristic of carbon and of SiO2. Carbon is predominant. The presence of carbon in these films was confirmed by use of the electron microprobe. Formation of the films occurs independently of the ions used and is attributed to a contaminated vacuum of the high-voltage machine. The carbon is most likely the product of the pump oil which is cracked and polymerized under ion impact. The films stick tenaciously to the silicon surface and burn off in a low-temperature Bunsen flame. 1.2) Mechanical Perfection of the Silicon Surface. The mechanical perfection of the bombarded silicon surface was investigated through optical microscopy, electron microscopy in which the replica technique is used, and optical interferometry. No mechanical damage of the surface was visible after bombardment. However, if a bombarded sample is soaked for several minutes in hydrofluoric acid (HF), gas bubbles may develop in certain spots of the silicon surface. It is also noted that in these areas the surface film starts to peel off. Relatively large patches of film come off if the sample is soaked in HF during ultrasonic agitation. After HF treatment, pits may be present on the silicon surface. The pit dimensions are estimated to be as large as 50 µ. The pits appear in the region of most intense irradiation. 1.3) Lattice Perfection After Bombardment. No lattice damage is found on the silicon surface. Electron transmission micrographs and selected area diffraction patterns of the surface show no difference before and after bombardment. Measured approximately 2 µm down from the surface, the silicon lattice throughout this depth is of good perfection. Well-defined Laue spots and Kikuchi lines are obtained from the surface as well as from the indicated area below the surface. However, some radiation damage is dispersed in this top layer. A sharp boundary line separates this surface layer from a highly damaged layer which extends further downward into the silicon. Typical of this

Jan 1, 1970

By H. G. Doll

A new electrical logging method. called MicroLaterology is described. whereby the resistivity R of the invaded zone close to the wall of the bore hole is measured. This method essentially utilizes a system of concentric circular electrodes iml,edded in an insulating support which is applied to the wall of the hole. A beam of current of very small diameter is focused horizontally into the formations by means of an automatic control device. and then opens widely at short distance from the wall. with this method, R most often can be recorded directly. except when the mud cake is very thick. in which case a correction is easily provided. The basic role of factor R in the quantitative analysis of electrical logs in terms of fluid saturation and of porosity is explained. The paper is illustrated with field examples. INTRODUCTION In electrical logging. the resistivity of that part of the penneable and porous formations which is invaded by mud filtrate is an important factor in the interpretation. Measurements made with the conventional devices — normal. lateral — and also with improved systems as the Laterolog and induction logging&apos; — are very often more or less affected by the presence of the invaded zone. and the knowledge of the resistivity of this zone is useful in the evaluation of the true resistivity of the beds. which itself is a basic element for the determination of fluid saturation. Moreover. the comparison of the resistivity of the invaded zone with the resistivity of the mud filtrate gives valuable indications on the magnitude of the formation resistivity factor — which in turn is necessary for the quantitative interpretation of the logs. both in terms of fluid saturation and of porosity. On the other hand. it is generally admitted that the invaded zone is not a homogeneous medium separated from the uncon-tamirlated part of the bed hy a well defined cylindrical boundary. but that the fluid distribution—filtrate. connate water. hydrocarbon — and hence. the resistivity. in the invaded zone varies progressively with the distance from the wall of the hole. The term "resistivity of the invaded zone" therefore corre-sponds to an average value which is a function of the distribution of the fluids Inasmuch as the law of this distribution is not exactly known, the resistivity of the invaded zone is not a well defined factor. A much better definition is obtained if the medium under consideration is limited to that part of the formation which is within a short distance from the wall of the hole. It seems likely a within a distance of at least two or three in., most of the fluids in in the pores of tile formation have been displaced by the mud filtrate. The connate water has almost certainly been flushed out. and the oil. if any has generally been reduced to a comparatively small amount. The resistivity witliir~ the radial limit of two to three in. is. therefore. prac.tically constant at an). given level: its value. at least when the proportion of conductive solids in the formation is negligible. is chiefly dependent on the resistivity of the filtrate and on the porosity of the formation, and is affected only to a relatively small degree by the presence of the small amount of residual oil. This part of the formation close to the wall of the hole will he designated in the following as the "flushed zone." a-distinguished from the more general term of "invaded zone&apos;. which relates to the part of the formation extending from the wall out to the distance where the formation is completely uncontaminated. The symbol R,, will he used for the resistivity of the flushed zone. (The notation R is related to the radial distance from the hole. If x designates this distance. xo is the initial value of x, i.e., the value corresponding to the region very close to the wall.) The determination of R is difficult, if not impossible. from logs made with the conventional devices. The long normal and the long lateral are. of course. not suited for this purpose because their radii of investigation are by far too large. The short normal. and the limestone sonde—-after correction for the effect of the hole hole — give resistivity values which corre. spond to materials situated within a comparatively short distance from the hole, but this distance is still several time. as great as the thickness of tire flushed zone. The only value which can be obtained with these devices corresponds to an average resistivity of the invaded zone- — and this only provided the invasion is deep enough, since otherwise the meas "red values would also be affected by the uncontaminated region beyond the invaded zone. It should nevertheless be recalled that despite these limitations. the measurements given by the short normal and or the limestone sonde are always very useful for qualitative interpretation. and also in favorable cases for the qantitative analysis of the logs in terms of saturation and porosity. The MicroLog. which was primarily developed for the detection of permeable beds and for an accurate determination of their boundaries. provides a good approach towards the evaluation of R. In the case of hard formation.. however. The

Jan 1, 1953

By Eugene S. Meieran

The effects of methods of crystal growing, wafer sawing, polishing, routine handling, diffusion, and epitaxial growth on the defects in GaAs are reviewed and studied using reflection and transmission X-ray topographic techniques. In general, it was found that boat-grown crystals exhibited fewer defects than Czochralski crystals, although all crystals showed large numbers of precipitates visible when examined in the electron microscope. Mechanical surface treatments such as sawing and mechanical polishing introduce damage to a depth of about 5 µ, most of which can be removed by suitable chemical or chem-mechanical polishing. In addition, defects can be introduced through routine handling of wafers, for example with metallic tweezers. These defects can be quite severe, and have been observed 20 µ below the wafer surface. Defects can also be introduced through diffusion and epitaxial growth. These defects, which include precipitates, growth pyramids, stacking faults, dislocations, and so forth, can be detrimental to device fabrication. It is shown that wafers or films which appear defect-free optically can contain defects visible in the X-ray topographs. WHILE the use of GaAs in the semiconductor industry has increased very rapidly in the last few years, due mainly to the recent development of many important GaAs devices,1,2 the major limit to the production of commercial quantities of many GaAs devices remains a severe lack of suitable materials technology. This lack is apparent in two critical areas. First, production quantities of high-quality GaAs crystals, reproducibly doped and precipitate-free, simply are not available commercially, although some reasonable quality material is available on a limited first-come, first-serve basis. Second, in comparison to silicon technology, little is known about the effects of processing variables on the defects either present in as-grown GaAs or introduced through processing and handling of wafers. These areas are now receiving some attention from semiconductor device manufacturers, who are studying defects in GaAs in order to better understand how either to prevent their occurrence or to cope with their existence. Most investigations of the defects in GaAs have been made by optical microscopy3-5 or transmission electron microscopy techniques.&apos;-&apos; Recently, however, the imaging techniques of X-ray topography, electron mi-croprobe analysis, and scanning electron microscopy are being applied to the study of GaAs.9-14 In the case of X-ray topography, a one-to-one image is obtained that must be photographically enlarged. In compensa- tion, the defects within entire wafers may be imaged by simple scanning (Lang technique15) if the wafer is reasonably perfect, or by using the scan oscillation technique developed by Schwuttke16 if the wafer is warped or distorted. The purpose of this paper is to both review and extend the general application of X-ray topographic techniques to GaAs. Emphasis will be placed on the effects of growth and process variables on the quality and perfection of both bulk and epitaxial GaAs. Reference to optical or electron microscopy results will be made when useful. Since the effects on defects of a wide variety of processing variables such as crystal growing, sawing, polishing, diffusion, and epitaxial growth will be somewhat superficially reviewed, a fairly extensive bibliography of the most important recent results in these areas is included. However, for completeness, important defects will be illustrated here, although such defects have been previously shown by others. While this paper is concerned with defects rather than with the physics of X-ray scattering, the mechanisms of contrast formation in the topographs will of necessity be briefly mentioned. EXPERIMENTAL GaAs crystals, both boat-grown18 and Czochralski-grown,&apos;8 containing a variety of dopants of various concentrations, were purchased from outside vendors. Wafers were sliced from the crystals using a Hamco ID saw and were mechanically polished using 1 µ diamond paste. Chem-mechanical polishing was done in bromine-methanol as described by Sullivan and Kolb.18 Chemical polishing was done using a modified sulfuric-peroxide solution, 11 parts H2SO4, 1 part 30 pct H2O2, 1 part DI water.5 Zinc diffusion was carried out in a closed tube, using a 10 pct Zn-In source at 825°C for 1 hr. Oxide masking techniques were used to select the area to be diffused. Epitaxial wafers were either purchased or prepared here. All epitaxial runs prepared here were carried out using a Ga-GaAs-AsC13 source in a closed tube at a substrate temperature of 750°C. Wafers were chem-mechanically polished and gas-etched prior to deposition. The X-ray topographs were taken on a Krystallos Lang camera, operating in the transmission scanning geometry (Lang technique15) or in the reflection scanning geometry (modified Berg-Barrett technique20,21). MoKa, radiation was used for all transmission topographs using a Jarrell-Ash 100-µ spot focus. CuKal radiation was used for all reflection topographs using a General Electric CA-7 1-mm spot focus X- ray tube. Topographs were printed from an intermediate contrast inversion film, so the contrast shown in all figures here is the same as that of the original 50-µ-thick emulsion L4 Iiford nuclear plate used to record the topograph.

Jan 1, 1969

By K. A. Jackson, J. D. Hunt

A general theory for the growth of lamellar and rod eutectics is presented. These modes of growth depend on the interplay between the diffusion required for phase separation and the formation of interphase boundaries. The present analysis of these factors provides a justification for earlier approximate theovies. The conditions for stability of rod and Lanlellar structures are consitleved in terms of the mechanisms by which the structure can change. The mechanisms considered include both small adjustments to the lnnzellar spacing due to the motion of lamellar faults, and catastrophic changes due to instabilities. It is concluded that stable growth occurs at or near the minimum interface undevcooling for a gizierz growth rate. The conseqrlences of the existence of a diffusion boundary layer at the interface are discussed. The experimental results for the variation of growth rate, undercooling, and Lanzellar spacing are cornpared with the theory. We believe that the theory presented in this paper provides an adequate basis for understanding the complex phenomena of lanzellar and rod eutectic growth. The growth of lamellar eutectics has been the subject of several theoretical and many experimental studies. The foundations for the theoretical work were laid by zenerl and Brandt2 in their analyses of the growth of pearlite. Zener estimated the effect cf diffusion, and took into account the surface energy of the lamellar structure. He found that the lamellar structure could grow in a range of growth rates at a given undercooling provided the lamellar spacing was appropriate for the growth rate. Since pearlite grows with only one growth rate and one lamellar spacing at a given undercooling, there is clearly an ambiguity in the theory. Zener removed this ambiguity by postulating that the growth rate was the maximum possible at the given undercooling. He predicted then that the product of the growth velocity v and the square of the lamellar spacing A should be constant, i.e., A2v = const. Brandt2 started out by assuming that the interface between the lamellae and austenite was sinusoidal. Because of this, the ambiguity encountered by Zener did not arise. Brandt was able to obtain an approximate solution to the diffusion equation, but, since he did not take into account the surface energy, his considerations are incomplete. Tiller3 applied some of these ideas to the growth of eutectics, and proposed a minimum undercooling condition to replace the maximum velocity condition used by Zener. These conditions are formally identical. Hillert4 extended the work of Zener. He found a solution to the diffusion equation assuming the interface to be plane. Taking surface energy into account, and applying Zener&apos;s maximum condition, he was able to calculate an approximate shape of the interface. Jackson et al.5 used an iterative method employing an electric analog to the diffusion problem to refine the calculation of interface shape. It was found that the interface shape calculated from a plane-interface solution to the diffusion equation was negligibly different from the exact solution. The method provided an analog only for eutectics for which the volumes of the two phases are equal, growing from a melt of exactly eu-tectic composition. There has also been considerable experimental work on eutectics, Several experimenters8-10 found that A2v is constant as predicted by Zener.1 Hunt and chilton10 demonstrated that ?T/v1/2 is also a constant for the Pb-Sn system as predicted. Lemkey et al.11have recently found A2v to be constant for a rod eutectic. In the present paper, we present the steady-state solution for the diffusion equation for a lamellar eutectic growing with a plane interface, for the general case, that is, with no restriction on the relative volumes of the two phases, and with the melt on or off eutectic composition. A similar solution is also found for a rod-type eutectic. Expressions are obtained for the average composition at the interface and the average curvature of the interface. These equations for the average composition and curvature are similar in form to those derived by Zener1 and Tiller,3 and provide a justification for some of the approximations made by these authors. The mechanisms by which the spacing in a lamellar structure can change are considered. The important mechanism for small changes in lamellar spacing involves a lamellar fault. Examination of the stability of lamellar faults leads to the conclusion that the growth occurs at or near the extremum.* The insta- bilities which can develop in a rodlike structure are also discussed, resulting in the conclusion that this structure also grows at or near the extremum. Comparison of the conditions for rod and lamellar growth permits a prediction of the surface-energy anisotropy required to produce rods or lamellae for various volume-fraction ratios. The diffusion equation predicts the existence of a diffusion boundary layer at the eutectic interface unless the eutectic has 0.5 volume fraction of each phase and is growing into a liquid of eutectic composition. This boundary layer is such as to make the composition in the liquid at the interface approximately equal to the eutectic composition. This boundary layer permits changes in composition during the zone refining of eutectics. Photographs of the eutectic interface of a growing transparent organic eutectic system have been made. Both the components of this eutectic are transparent organic compounds that freeze as metals do.12 The in-

Jan 1, 1967

By AIME AIME

WTHIN the next month all members of the Institute will be given an opportunity to vote for a new President, two Vice-Presidents, and five Directors. All of the candidates nominated by the official committee are well known to certain groups of the Institute membership but a brief record of their professional lives will be given here for the information of those that will vote. Not since 1927, when Everette DeGolyer guided the destinies of the Institute, has a member of the Petroleum Division been a candidate for President. John Meston Lovejoy has been a Director since 1930, and a Vice-President as well for the last year: In the three years 1932-4 lie was also chairman of the Admissions Committee. Dir. Lovejoy graduated from the Columbia School of Mines in 1911, just before lie was 22 years old, and began his professional career as a copper miner at Chuquicamata. Chile. Silver and gold mining later claimed his % attention, and it was not until 1914 that lie gut into the oil business, as geologist for the Standard Oil Co. of N. Y. This took hint to China and he later worked for the company in Wyoming. In 1917 lie joined the Army where lie rose to be captain of Field Artillery. Upon his return to the United States he went to work for the Amerada Petroleum Co., of which he later became vice-president and general manager, with headquarters in Tulsa. Since coining to New York he has been president of the Petroleum Bond & Share Cu.. and is currently president of the Seaboard Oil Co.

Jan 1, 1935

THE Fall Regional Meeting of the Institute, which has now for some years been held in cooperation with the Western Division of the American Mining Congress, will be held this year at Joplin, Mo., in the heart of the great Tri-State district. This year the Tri-State Zinc and Lead Ore Producers Association is joining in the meeting. The Society of Economic Geologists will also take part though not offering any papers. The district in which the meeting is held includes adjacent parts of Missouri, Kansas and Oklahoma. Out in the heart of a fertile prairie farming country, it is one of the major mining districts of the world. It produces normally approximately one-third of the zinc ore mined in the United States which is equivalent to nearly one-half the zinc since the concentrate has always been notable for the height of its grade. Even in the depressed business year 1930, the American Bureau of Metal Statistics credits the district with 434,460 tons of concentrates equal to 217,230 tons of zinc out of 1,503,095 and 576,630 respectively for the country as a whole. This was equal to about one-seventh of the world&apos;s output of zinc, more than that of any foreign country. In addition about 75,000 to 100,000 tons of lead is annually furnished by the same mines. Elsewhere we present a general description of the district prepared for this meeting by J. C. Heilman, a Lehigh graduate, who has spent the past eleven years there and has had charge of explorations for many of the companies.

Jan 1, 1931

By Daniel T. O’Brian

Mineral exploration activities are benefiting from new interpretive techniques which have become economically practical with computers. Government agencies, educational institutions, and industry have each contributed research and development efforts for improving the mathematical analysis and graphical display of exploration data, resulting in operational aids not foreseeable a decade ago. Progress has been worldwide and is expanding rapidly. Books 1-10 are supplementing the periodic literature, at least one abstracting service is now active, 11 and an association has recently been formed to encourage and publicize advances in this field. 12 With the diversity of applications, only partial coverage of the subject can be made at any single symposium. Four of the six papers in this section report on the current state-of-the-art in selected areas of interest: graphics, time-sharing, mathematics, and economic analysis. The remaining two papers are descriptions of advanced statistical techniques for gaining additional information during exploration, and illustrate methods which will become more commonly applied in the future. "Computer Graphics: A New Tool for Exploration and Mining" describes the use of a computer and accessory equipment as an information retrieval device, graphically merging and displaying pertinent information for visual inspection and interpretation. This is a rapid means of studying information which has been pre-stored in a form accessible to the computer. Time-sharing is a means of achieving a comparable rapid response when calculations are being performed. The paper, "Some Applications of Time-Sharing in Mining Geophysics," describes the experience of one company using a time-sharing facility for geophysical computations. Another paper on this subject, stressing mining applications, has recently been published. 13

Jan 1, 1969

[University of Alaska College, Alaska Mining Society TOM CHRISTENSON, President MARY ANN KISER, Secretary H. G. WILCOX, Faculty Sponsor WM. FACKLER, Counselor University of California Berkeley, California Mining Association JOHN W. COOK, President LORETTA A. RICHTER, Secretary W. S. WEEKS, Faculty Sponsor]

Jan 1, 1946

By T. A. Read, H. K. Birnbaum

STRESS-induced twin boundary motion in the AuCd ß&apos;phase (52.5 at. pct Au 47.5 at. pct Cd having an orthorhombic structure (space group D h)&apos; was discussed for the case of transformation twins.&apos; Mechanical twinning, i.e., introduction of new twin orientations by the applied stress was sometimes observed in the ß&apos; phase which contained two transformation twin orientations. (See Ref. 2 for experimental details.) The transformation twins terminated at the mechanical twin boundary; the two initial orientations having been twinned to the new orientation as shown in Fig. l. In a "hard" tensile instrument, formation of each mechanical twin was accompanied by a sharp drop in load (and an audible click) resulting in a typical serrated load-extension curve. The mechanical twins increased in width and additional twins were nucleated as the load increased until the entire specimen was occupied by the mechanical twin orientation. A restoring force2 caused the mechanical twin and transformation twin boundaries to return towards their initial configuration on releasing the load. In a stabilized specimen* the total strain introduced by mechanical twinning was recovered on releasing the applied stress. Initial and final microstructures were identical. After decreasing gradually to a critical width, mechanical twins suddenly disappeared accompanied by audible clicks and sharp increases in load (measured at a constant rate of crosshead motion in a "hard" machine). Mechanical twins could be stabilized in any position by maintaining the applied load for a sufficient time, indicating a decrease in restoring force with time similar to that observed for transformation twins.&apos; Orientation relationships for mechanical and transformation twins were determined and are shown in Fig. 2. The mechanical twin, T3, was twin related to transformation twin, T,, by reflection in (1ll), and twin related to transformation twin, T2, by reflection in (111)T, . T, was related to T, by reflection in(ll1)T1 . The "average" mechanical twin composition plane lay several degrees from (1ll), . In every specimen which mechanically twinned, orientation T3 was most highly favored by the applied stress, i.e., it was the twin orientation which provided the greatest change in length compatible with the direction of applied stress

Jan 1, 1961

By Cecil H. Desch

THE progress of metallurgical practice and the demands made by the engineering industry on our foundries and mills have made the crystalline structure of metals a subject of far more than academic interest. Metals and alloys are made up of crystals. Even if we accept the view, so ably maintained by some metallurgists, that the crystals are separated from one another by an amorphous layer, it remains true that all but a very minute fraction of any metallic mass is crystalline. The conditions which affect the growth of crystals are therefore of importance in metallurgy. It is not only castings whose properties depend on the arrangement of their crystals, for the more we learn of the behavior of forged, rolled and drawn metals, the more certain it becomes that it is profoundly influenced by the size and arrangement of the crystals in the original ingot, deter- mining a structure which may persist in a modified form through a long series of mechanical operations and annealings. This is mainly due to the concentration of much of the impurities in the last portions of the liquid to freeze, so that the boundaries between single crystals or groups of crystals are marked out by a zone of segregated material, differing in properties from the mass, and offering a barrier to diffusion and equalization of composition throughout the whole. The importance of this fact has been fully recognized by steel manufacturers, who have to deal with ingots which are sometimes very large, and are cast at a high temperature, containing impurities which have a marked effect on the properties even when present in very small quantity. For this reason the Iron and Steel Institute has set up a committee to examine the whole question of the heterogeneity of steel ingots,(l)f and a report has been issued, containing an account of the structure of 16 ingots, ranging in weight from 15 cwt. to 172 tons, each of which was sectioned and examined by chemical analysis and by etching. A valuable body of data concerning segregation has thus been collected. The work of the committee is being prosecuted with great activity, and at the same time researches are in progress to determine the physical

Jan 1, 1927

By S. A. Falconer

Much attention and publicity has been given, during recent years, to grinding, classification, flotation, and thickening. The various technical papers, and symposiums held to discuss these important phases of milling, have contributed to a better under- standing of the fundamental principles and operating variables involved. Another important part of milling- to the flotation operator-is a treatment step to which frequently too little attention is given-" conditioning," or the treatment the ground mineral pulp receives before it enters the flotation machines. Conditioning" is a hackneyed and frequently misused term, commonly employed to describe the pretreatment of surfaces of minerals in ore pulps or mill pr6ducts prior to froth flotation. In general, such pretreatment is for the purpose of changing the flotation characteristics of these mineral surfaces to enable them to respond in some desired predetermined manner when subjected to flotation. Taggartl states that the function of conditioning is "either to insure selective collector coating of one mineral species while another species is not; or to take such steps as will compensate for departure there from."

Jan 1, 1949

By H. O. Hofman

(Canal Zone Meeting, November, 1910.) I. INTRODUCTION. IN a previous paper,1 The Behavior of Calcium Sulphate at Elevated Temperatures with Some Fluxes, we published the results of our investigation, into the behavior of calcium sul-phate in air; that, is, under oxidizing conditions. The results as a whole hold good for a neutral atmosphere, or one which has no chemical effect upon calcium sulphate. The present paper deals with the behavior of calcium sulphate under reducing conditions, the reducing-agents employed being carbon monoxide and carbon, and the changes the calcium sulphide formed undergoes when it is subjected to an oxidizing-roast. Technical literature deals very sparingly with the subject. The information furnished by the recent leading chemical manuals is general. Thus Dammer,2 Moissan,3 and Abbegg,4 quote Berthier as having reduced, in 1823, calcium sulphate with carbon, and Stammer as having done the same in 1851 with carbon monoxide; Gmelin Kraut 5 add Leplay and Laurent (1848) as third investigators. Metallurgical authorities confine their statements to the known fact of reduction by carbon. II. PREPARATION OF RAW MATERIALS. 1. Calcium Sulphate.-This salt was prepared in the same manner as described in our previous paper,6 and was found to be chemically pure. * Professor of Metallurgy, Massachusetts Institute of Technology. + Metallurgical Instructor, Imperial Technological Institute. 1 Trans, xxxix., 628 to 653 (1909). 2 Handbuch der anorganischen. Chemie, vol. ii., part 2, p. 309 (1894). 3 Traité de Chimic Minérale, 1904, vol. iii., p. 543. 4 Handbuch der anorganischen Chemie, vol. ii., part ii., p. 116 (1905). 5 Handbuch der anorganischen Chemie, vol. ii., part 2, p. 233 (1909). 6 Trans., xxxix., 630 (1909).

Nov 1, 1910

By D. W. Brunton

Discussion of the paper of D. W. Brunton, presented at the Spokane meeting, September, 1909, and published in Bulletin No. 33, September, 1909, pp. 837 to 855. WILLIAM&apos; KENT, New York, N. Y.:-The Institute may congratulate itself on the opportunity of reading the splendid address of President Brunton. It is au admirable summary of the progress that has been made in the mining and metallurgical arts in recent years. The paper rightly give&apos;s the chief credit for this progress to the aid which has been rendered to these arts by the advances in mechanics, chemistry, and electricity. It is notable that most of the headings in Mr. Brunton&apos;s address refer to the work of the mechanical engineer, the electrical engineer, and the chemist, rather than to that of the specialist in mining-operations. It seems that. the most successful mining engineer of the present day is the one who makes the most intelligent application of the inventions and designs of engineers and others who are not directly engaged in mining. A tabulation&apos; of the headings of the address, grouped as below, shows this most clearly. Work of the Mechanical Engineer-Rock-drills, hoisting-machinery, tramming, pumping, ventilation, dredging, sampling, concentration, briquetting, fume-recovery. Work of the Electrical Engineer-Electric machinery for hoisting, pumping, tramming, lighting and signaling, electric . transmission, electric smelting. Work of the Chemist and Metallurgist-Explosives, chlorination, cyanidation, roasting, lead-smelting, and copper-smelting. Work of the Geologist-Economic geology. Work of the Mining Engineer-Mine-mapping, surface-mining, timbering, tunneling; and planning and supervision of the work in general. The mining engineer of the present day, who is in responsible charge of a large plant, finds his chief work not in doing

Jan 1, 1910

By D. I. Bardos, A. M. Bardos, Paul A. Beck

The approximate effective silicon radii in ternary Laves phase alloys with transition elements and silicon were found to range between 1.16 and 1.21A, i.e., considerably smaller than the atomic radius calculated for elemental silicon. The atomic radii were found to increase with the size of the transition element atoms in the structure. It has been noted by Aronsson1 that silicon in solid solution in iron, cobalt, and nickel has an effective CN 12 atomic radius of approximately 1.20Å, a value very much smaller than the CN 12 radius of 1.34Å derived from the interatomic distances in elemental silicon.7 The unusually short metal-silicon interatomic distances in transition element monosilicides and disilicides have been also pointed out by various investigators.1 A similar tendency was observed by Nevitt in Cr3O type silicides.2 Recent work on Laves phases in ternary systems of silicon with transition elements4"8 suggested that extensive Laves phase fields may occur in such systems.8 It has been pointed out by Laves7 that the MgCu2 and MgZn2 type structures lend themselves particularly well for the determination of the effective radii of the component atoms. In these AB2 phases the B atoms are arranged in close packed straight lines, and their distances are related in a simple manner to the lattice parameters.8 The present work was undertaken in order to find out whether or not the B transition element in such AB2 Laves phases can be replaced to an appreciable extent by silicon. In cases where extensive substitution proves to be possible, the "average atomic radius for the B site" at various silicon contents was to be determined, and the effective atomic radius of silicon calculated by extrapolation to complete replacement of the B component by silicon. The following ternary systems were studied: Ti-Mn-Si, Ti-Fe-Si, V-Co-Si, V-Ni-Si, Nb-Fe-Si, Nb-Co-Si, Ta-Fe-Si, Ta-Co-Si, and Mo-Fe-Si. In all of these alloy systems, the Laves phase solid solutions were found to extend over a considerable range of silicon content. As previously reported,4"8 in the V-Co-Si, V-Ni-Si, and Mo-Fe-Si ternary systems Laves phases do occur, even though there are no corresponding binary Laves phases. In stabilizing the Laves phase, silicon acts as if it were decreasing the effective electron concentration of the alloy.8 A more detailed study of the boundaries of the Laves phases in the V-Co-Si and V-Ni-Si systems has been made and will be published elsewhere. In both cases, the elongated Laves phase fields extend parallel to the B-Si side of the composition triangle, clearly showing that silicon is substituting for cobalt, respectively, nickel over a wide range of compositions. The binary Laves phases NbCo2 and TaCo2 have the cubic MgCu2-type structure. It was found that, in both ternary systems with silicon, again the MgZn2-type hexagonal Laves phase is stabilized and that this phase extends to high-silicon contents. In each ternary system at least three Laves phase alloys of the composition A(B1_xSix)2 were used, x here denoting the fractional substitution of the B-transition element atoms by silicon. The alloys, listed in Table I, were prepared by arc melting in argon. Each specimen was water quenched after a homogenizing anneal of 3 days at 110(FC, except for the Mo-Fe-Si alloys, which were annealed at 1200°C. Metallographic examination showed that most of the homogenized alloys consisted of a single phase, although some had minor amounts of a second phase, as shown in Table I. X-ray diffraction patterns were prepared using an asymmetrical focusing camera of large resolution and Fe Ka radiation. The patterns were indexed, and the lattice parameters of the hexagonal Laves phases were determined from the available diffraction lines of highest indices: (213), (205), and (313). The lat-

Jan 1, 1963

By J. V. Richards

(Canal Zone Meeting, November, 1910,) THE Altar district, State of Sonora, Mexico, is for the most part a desert with but little rain-fall and few running streams. On account of this scarcity of water it is necessary for the natives to " dry-wash" the placer-gravel, and the object of the present paper is to describe some of the more common Mexican dry-washing devices. My observations were confined to a property known as Las Palomas placers, 15 miles from the Gulf of California and about 150 miles south of the United States border; a brief description of which property may be of interest as illustrating what is, perhaps, a typical Sonora dry placer. It is said that as long as a century ago the Yaqui Indians discovered rich cement-gravel, known as argo masa, at Las Palomas, and that there has been a more or less steady production of gold from the property ever since. The argo masa is a fairly-coarse gravel, the pebbles being quite firmly held together with a lime cement. Gold is scattered through this cement in particles ranging from fine specks to pieces several grams in weight, and occasional large nuggets are encountered. The contents vary so widely that it is difficult to estimate the average value, but returns of from $10 to $50 per cubic yard are common, and it is doubtful if the Indians considered anything less than from $4 to $5 a yard as "pay dirt." This argo masa occurs in channels varying in thickness from a few inches to several feet, and in width up to 300 ft.. These channels are continuous and are probably ancient stream-beds. They are for the most part covered with an over-burden of a more recent gravel, varying from 30 to 50 ft. thick, and the fact that this over-burden contains values as high as $1.50 per cubic yard, and yet was not worked by the Indians, shows that their idea of what constituted pay-ground was high.

Apr 1, 1911