Technical Notes - Etch Pits and Dislocations in Germanium and Silicon

WHILE examining lineage boundaries in germanium single crystals as described by Vogel et al.,&apos; patterns of conical etch pits were noted which reveal interesting properties of dislocations. The crystals were grown by pulling in the <100> direction, and (100) surfaces perpendicular to the growth direction were etched 4 min in a mixture of 6 cu cm HF, 10 cu cm HNO3, 6 cu cm acetic acid, 3 drops Br,. Lineage boundaries extended in any direction, but favored the <110> direction. The patterns which were noted first were composed of two or three etch pits arranged symmetrically about the lineage boundary, so that the doublets were spaced equally on either side of the boundary line and the triplets had their center pit on the boundary line. The triplets occurred less often than did the doublets; occasionally combinations were found. Two such combination patterns are shown in Figs. 1 and 2. The orientation of the patterns was determined approximately by subsequently etching the same surfaces in a mixture of 5 cu cm HF, 5 cu cm super-0x01, and 20 cu cm distilled water which produced nearby random square etch pits having edges in the <110> direction. In all cases, the axis of symmetry was <110>, being parallel to the etch-pit edges. Several successive lapping and etching operations showed that the patterns tended to continue through the crystal in the <100> direction, but eventually changed or vanished. It can be seen in both photographs that the pits in the patterns are much further apart than the pits in the adjacent section of the lineage boundary. In Fig. 1, the 10 pits of the pat-