Study on Atomistic Model for Simulation of Anisotropic Wet Etching

The silicon anisotropic wet chemical etching technique is widely employed for fabricating various microelectromechanical system (MEMS) structures for advantages such as simple etching equipment and its capability to fabricate special microstructures. In this paper, we consider a complete theoretical derivation of the analytical solution based on geometrical and kinetic aspects of step flow on any surface and with a mathematical method we derive new equation for calculating the microscopic etch rates of surface atoms for a new range of concentrations and temperatures. Furthermore, a novel equation is presented for the calculation of the microscopic activation energies for some typical surface atoms and a new comparison of activation energies between some atoms is made that divides atoms into three categories. The results demonstrate agreement with the experimental results.