Study of n-GaAs Corrosion Behavior by Electrochemical Methods and XPS

Corrosion of GaAs in aqueous electrolytes is a major limitation in implementing GaAs-based photoelectrochemical solar energy conversion systems, In this work, the corrosion behavior was investigated by electrochemical methods and surface analysis approaches, in both H2SO4 and NH3?H2O solutions, Open-circuit measurements showed that the cleaned GaAs surface was very sensitive to water/air, Impedance measurements for n-GaAs showed that an inductive loop only appeared at a high corrosion rate because a reaction intermediate is the oxidant for a further decomposition step in combination with chemical reaction with water, The results suggest that the same corrosion/decomposition mechanism occurred on n-GaAs in the two solutions, When the surface-hole concentration was low, the hole injection or generation process was the rate-determining step, At large reverse bias on n-GaAs, with high-hole concentration, the corrosion rate was limited by a Faradaic adsorption process, involving an adsorbed intermediate, The different surface compositions after corrosion in the two solutions can be explained by the dissolution of As(0), Further oxidation of As(0) to As(III) in NH3?H2O solution is still slow, as suggested from X-ray photoelectron spectroscopy (XPS) analysis,