Study of EDT A Complexed Electroless Copper Plating for ULSI and Electronics Applications .

In copper metallization, resistivity of copper seed layer is very important since the thickness of seed layer is less than 200iun. Conventionally MOCVD has been used for this purpose however electroless copper plating is simple process and the resistivity of copper deposit is less than that of copper prepared by MOCVD. In this study eIectroless depositions of copper were conducted on different substrate to find optimum conditions of electroless copper plating for electronic applications. To find optimum conditions, the effects and selectivity of activation method on several substrates were investigated. The effects of copper bath composition on morphology were investigated. The effects of pH and stabilizer on deposition rate was investigated. The resistivity of copper with thickness was also measured.