Solar Grade Silicon Purification Using Liquid Phase Migration Technique

"In metallurgical grade silicon (MG-Si), most impurities mainly exist at the grain boundaries and distribute in silicon grains at extremely small contents. Grain boundary phases in MG-Si transform into liquid above the eutectic temperature, and migrate towards high temperature regions when heated under a temperature gradient. With the migration of all liquid phases in MG-Si to the surface, the impurity contents will be decreased less than their solubilities in principle.In the present work, the fundamental research was conducted to discuss the possibility for purification using the liquid phase migration technique. The purification limit was estimated by thermodynamic calculations, and metallic impurities were estimated to be effectively removed except for Fe and Al. The migration behavior of the liquid phase in the synthesized silicon substrate was investigated by unidirectional heating under infrared radiation at 1523-1548 K, and the proceeding of migration was confirmed. The migration velocity was 1.4--2.0xl0-7 mis, and found to be controlled by the liquid phase diffusion.IntroductionPhotovoltaic energy is one of promising energy resources in a sustainable society because of its inexhaustibility and cleanliness. Although the production and installation of solar cells have increased significantly during the last decade, the cost of solar cell installation is still high. To enable the widespread use of photovoltaics and for the photovoltaic electricity price to reach grid parity, a low-cost and abundant feedstock of solar grade silicon (SOG-Si) is essential. Recently, a modified Siemens process and a fluidized bed reactor process were developed to address the cost and energy issues associated with the conventional Siemens process. However, their cost reduction potential is limited because of the large energy consumption needed to convert silicon into gaseous compounds. Purification of silicon through metallurgical routes offers a promising way for producing SOG-Si from metallurgical grade silicon (MG-Si), because it enhances productivity and can also lower the process costs. Although several metallurgical processes such as directional solidification [l ], vacuum refining [2-4] and plasma oxidation [5-7], have been developed, processing times and refining efficiencies still have to be optimized."