Recovery of Gallium and Arsenic from Gallium Arsenide Semiconductor Scraps

In this paper, a novel technique for recovery of gallium and arsenic by thermal decomposition under vacuum is presented. The effects of distillation tem- perature on the volatilization behavior of each component were investigated. Theoretical calculations and experimental studies have shown that the method is feasible. The results show that under optimum conditions, highly pure Ga can be extractedwithadvantagesoverconventionaltechniques,includingsimpleoperation andenvironmentalfriendliness.Forexample,metallicgallium(purity > 99.99%)is obtained at 1273 K after 3 h under 3–8 Pa. Arsenic is obtained in the form of a elementary substance which could be preserved with relative ease. (cid:1) (cid:1)