Production of CdS1-xTex Thin Films and Bandgap Investigation of the Produced Solid Solution

"CdSi-xTex thin films with O<x<0.3 were prepared on glass substrates by the annealing of CdS:In thin films produced by the spray pyrolysis technique. The annealing was performed in nitrogen atmosphere at 400 --,C in the presence of Te vapor. The compositions of the films were determined by energy dispersive X-ray detection (EDAX) measurements. Scanning electron microscopy (SEM) was used to investigate the morphology of the films. The transmittance of the films was measured at room temperature in the wavelength range 400-1100 nm and used to produce the absorbance of the films. The first derivative of the absorbance was used to estimate the optical bandgap energy Eg by using the minima in the first derivative. The relation between the bandgap energy and the fraction x was found to fit with a parabola and bandgaps in the range 2.196: =Eg: =2.480 e V were obtained. Urbach tailing in the bandgap was also investigated.IntroductionPolycrystalline thin film CdS/CdTe solar cells are promising candidates for low cost and high efficiency photovoltaic applications. The fabrication process of these cells involves the deposition of a p-type CdTe absorber layer on top of an n-type CdS one which acts as a window. The efficiency of the solar cell is affected by the method of preparation of both layers [1, 2].Interdiffusion processes taking place at the CdS/CdTe interface have largely been realized to significantly affect the device performance [3] by changing the bandgap of both CdTe and CdS which modifies the spectral response of the solar cell [ 4]. The formation of a mixed crystal or a graded layer causes a reduction in the lattice mismatch at the CdS/CdTe junction [5] which is about 9% [ 6] and then a reduction in the number of interfacial states and recombination centers, thus enhancing the solar cell performance [7, 8]. A complete understanding of the properties of the intermixed layers CdSxTe1-x that usually constitutes the interfacial region in the CdS/CdTe solar cell is essential. According to our knowledge, a lot of research was devoted to the investigation of the diffusion of S into CdTe [3-5, 9]; but little on the direct investigation of the diffusion of Te into CdS [6]."