Preparation of High Purity Silver Thin Films by Laser MOCVD Using Liquid Source Delivery System

"(BTMSE)Ag(hfac) (BTMSE = trans-bis(trimethylsilyl)ethene) was chosen as a suitable precursor for the XeCl laser (308nm) MOCVD of Ag. Iso-propanol solution of (BTMSE)Ag(hfac) was used as a liquid source for the liquid delivery method, high deposition rate 9nm/min at substrate temperatures of 100°C and 120°C were obtained at the vaporizer temperature of 90°C. This deposition rate is three times faster than by conventional bubbling method and life of the source and reproducibility of the deposition were also improved. Electric resistivities of the laser deposited film shows significantly low resistivity of 10-6Q-cm compared to 1 o-3Q-cm of thermal MOCVD film. These results indicates that the laser MOCVD is one of the effective method for the preparation of the high quality silver film.IntroductionSilver films are a potentially important metallization material in electronic and photonic devises due to their lowest resistivity (1.6µ0-cm) among the metals, high optical reflectance and chemical stability. The MOCVD technique has advantages to sputtering or evaporation in the point of conformal growth and better coverage on sharp steps and narrow gaps[l-2]. For MOCVD application, silver precursors must have sufficient vapor pressure without decomposition at their evaporation temperature. To achieve stable precursor gas supply, liquid delivery of precursor material is promising[3-4] especially for materials that have not enough heat stability and high vapor pressure like silver complexes[S-10]. Several new silver complexes for MOCVD and UV irradiation effect to their MOCVD silver film quality were reported by same authors[5]. In this paper new solvent system for liquid delivery system of silver MOCVD were investigated to suite XeCl(308nm) laser MOCVD application."