Photoluminescence of P-Type CdTe Thin Films

"Cadmium telluride (CdTe) is a very interesting material that has many applications. Thin films of p-type CdTe can be used as the absorber layer in the heterojunction CdS/CdTe thin film solar cells in which n-type cadmium sulfide (CdS) works as the window layer. A review of the photoluminescence (PL) spectra ofp-type CdTe thin films prepared by different techniques was performed. The presence of defects and impurities such as oxygen and chlorine influence the PL spectrum. Copper and other dopants change the PL spectra and enhance the defects band. Chemical-heat treatment especially with CdCh is known to improve the quality of CdTe thin films because it decreases the Cd vacancies and quenches deep traps, so it enhances the PL signal. A discussion of chemical-heat treatment especially with CdCh, the effect of the ambient atmosphere, and that of the measuring temperature is performed.IntroductionCadmium telluride (CdTe) is a II-VI compound semiconductor that has a cubic zincblende (sphalerite) structure with a lattice constant of 0 A4~11]. Other than all of II -VI semiconductors, CdTe can be made both n- and p-type. But due to self compensation it is not easy to get p-type CdTe films [2]. Polycrystalline CdTe thin films are interesting because they have a lot of applications. Most of the problems associated with the use of these films are attributed to inhomogeneity, self-compensation, and the difficulty of forming a stable and lowresistivity ohmic contact [3]. CdTe technology has been established for a large number of applications, including solar cells, optical and nuclear detectors, and thermal- and radiationimaging devices [3]. At present, the highest demonstrated conversion efficiency for a CdTe based heterojunction (ID), with CdS as a window layer, is 16.5% [4, 5]. CdTe thin films can be prepared by different experimental techniques, such as thermal evaporation [l], electrochemical deposition (ED) [3], close-spaced sublimation (CSS) [3, 4, 6], physical vapor deposition (PVD) [3], chemical molecular beam deposition (CMBD) [7], and close space vapor transport (CSVT) [8].The objective of this paper is to make a review of the photoluminescence (PL) spectra ofp-type CdTe thin films prepared by different techniques and discuss the factors that influence the PL spectra. The composition of the film is very interesting in determining its PL spectrum. Different kinds of defects, impurities and dopants have their finger prints in the PL spectrum. Deposition techniques and deposition parameters such as the deposition temperature and ambient atmosphere also have their influence. Heat and chemical treatments which are known to improve crystallization and reduce the defects change the PL spectrum."