Photoluminescence of N-Type CdS Thin Films

- Organization:
- The Minerals, Metals and Materials Society
- Pages:
- 8
- File Size:
- 1464 KB
- Publication Date:
- Jan 1, 2013
Abstract
"Cadmium sulfide (CdS) in the form of thin films is an interesting material because it has a large variety of applications ranging from photovoltaic to luminescent devices. N-type CdS is usually used as a window layer in the heterojunction CdS/CdTe thin film solar cells. A review of the photoluminescence (PL) spectra ofn-type CdS thin films prepared by different techniques was performed. The effects of different dopants and impurities and the effects of temperature and deposition parameters on the PL spectra were discussed. Annealing in different atmospheres causes the changes in material structure and phase change from cubic to hexagonal phase which can be detected through the variations in the PL spectra. CdCh heat treatment improves the cystallinity of the films and enhances the exciton peaks and the green band in the PL spectra.IntroductionThin CdS films deserve attention because their expected gap emission lies very close to the highest sensitivity of the human eye. Thus, one might assume that thin CdS films are an appealing host for photonic devices [ l]. They have been used in a lot of applications including electronic and optoelectronic devices [2]. Thin films ofn-type CdS are widely used as a window layer in heterojunction solar cells such as CdS/CdTe solar cells. Doped and undoped CdS thin films can be obtained by different techniques such as; spray pyrolysis (SP) [3], chemical bath deposition (CBD) [2, 4], pulsed laser deposition [5, 6, 7], laser ablation [l], thermal evaporation [8].Several experimental techniques have been used in order to study semiconductor defects. In particular, photoluminescence (PL) has been shown as a powerful and sensitive tool in examining the crystal quality of polycrystalline thin films. PL can be used in the detection of defects which are radiative active. These defects can also act as traps in the transport of carriers [9]. The photoluminescence (PL) of thin film CdS is strongly influenced by the unbalanced stoichiometry, which is typical for CdS and is in general evoked by a Cd surplus. With increasing Cd content, the emission spectra move far below the gap to the red spectral range. Besides stoichiometry problems, independent of the material deposited, the PL properties of thin films depend on surface features and the influence of the interface between the film material and the substrate [10]."
Citation
APA:
(2013) Photoluminescence of N-Type CdS Thin FilmsMLA: Photoluminescence of N-Type CdS Thin Films. The Minerals, Metals and Materials Society, 2013.