PART III - Switching Characteristics of Small-Geometry Thin-Film Superconductors

A short discission is given of the cryotron us a supercozductitzg- switch. The parameters of interest such as gaiz, critical gate current, critical control current, and critical surface current density ave described. The photomask-photoresist process makes possible the study of much narrower dimensioned cryotrons than previously possible using mask stencils. Data is given for the above parameters as a function of width, thickness, temperuture, and crossing ratio. Photographs of the various circuits used are shown. The techniques involved in making connection to the circuits and the precautions taken to avoid side effects in the measurements are discussed. In particular data is given for critical currents of sipercotzducting. lines down to 2X 104 in. A vise in critical surface current density is obserced jor the strallev lines in both lead and tin. A discussion of the ihact of these measurements in the design of future cryotron circuitry is given. In addition to the improvement in device density achieved by simple scale reduction. additonal gains in density may result through improved device form factor. THE cryotron is a superconducting current switch, invented by D. A. Buck.' Fig. 1 shows a typical crossed-film cryotron. Usually the gate is made of tin and the control is made of lead. The critical gate current, is the current that drives the gate resistive with zero current flowing in the control. The critical control current, I is defined as the current in the control necessary to switch the gate resistive with a small monitoring current in the gate. The gain of the device, G, is defined as Since for uniform thin films G should be proportional to the gate width divided by the control width, it is convenient to define the critical surface current density, Jcg, to be the critical gate current divided by the gate wldth. The data which follows will show that, for a given control width, I, is relatively constant. Thus, by measuring Jcg the change in gain as a function of gate width may be measured without measuring I,.