PART III - GaAs Epitaxial Technology for Integrated Circuits

The next generation of integrated circuits will probably include circuits constructed in and of GaAs. The existence of both semi-insulating and semiconducting forms of GaAs is the fact which will bring this about. In this paper we discuss the uses and limitations of semi-insulating GaAs for integrated-circuit applications. The two main areas considered are the electrical isolation that can be achieved between components on a semi-insulating substrate and the characteristics of p-n junctions in contact with semi-insulating GclAs. A process basic to attaining integrated circuits in GaAs to fully utilize the insulating properties of the substrate is selective epitaxial deposition. This process involves the deposition of a SiO2 layer onto a The trend in integrated circuits is towards the use of high-resistivity substrates or regions to achieve component isolation. The use of SiO, layers in the oxide isolation methods and the use of sapphire substrates are examples of this idea. GaAs is also a polished surface of a GaAs substrate, etching out selected area of the SiO, film to expose a GaAs surface, and deposition only onto the exposed GaAs surface. By using this process , islands of semiconducting GaAs are deposited onto a semi-insulating GnAs substrate, the islands being electrically isolated from one another by the substrate. The deposition of both p- and n-type semiconducting GaAs can be carried out in this nzanner to form p-n junctions in the island areas. This process can also be used to produce a planav structure by deposition of GctAs through a SiO, mask into holes etched into the GaAs substrate. This Putterned Epitaxial Technology (PET) is described. very promising material for use in future integrated circuits because of the existence of both semi-in-sulating and semiconducting forms. Active devices can be fabricated in the semiconducting material, and these individual components can then be electrically isolated from one another by using semi-insulating GaAs as the substrate. Epitaxial semi-insulating GaAs can also be produced thus making three-dimensional monolithic integrated circuits feasible.' This paper describes the research aimed at developing the methods for producing both two- and three-dimensional integrated circuits in GaAs, and examines some of the properties of semi-insulating GaAs as they relate to these integrated circuits.