Part II – February 1969 - Communication - Proton Blocking Patterns for HCP and Wurtzite Structures

THIS communication reports film-recorded low-energy (-100 kev) proton blocking patterns'-3 for hcp and wurtzite crystals. In particular the sequence of relative line intensities* (corresponding to planar blocking) of common hcp metals is compared with those of the wurtzite semiconductors CdS and CdSe. The results show that the sequence is characteristic of structure. For closely similar structures such as those of CdS and CdSe, differences of line intensity attributable to the difference in atomic number, 2, of the scattering centers may also be seen. The apparatus and techniques used in this work were identical with those reported previously in a study of cubic systems.3 All metals were given standard metal-lographic etches, and the semiconductors cleaved, immediately prior to introduction to the vacuum system. Fig. 1 shows the unit cell of the wurtzite structure, and the geometry used to obtain the [1120] and [0001] patterns of Fig. 2. The axial ratio, c/a, for all ma- terials of Fig. 2 is close to 1.63. The patterns are then directly comparable in linear dimensions inasmuch as they have been reproduced at the same overall magnification of the patterns. (Overall magnification is proportional to the product of film-to-target distance and printing magnification. Thus the 1/6-in.-diam beam passage hole in the center of the film need not appear of uniform size in the prints.) The patterns for a given orientation, though similar