Papers - Crystal Orientation in Silicon-iron Sheet (T.P. 1178, with discussion)

The crystal orientation in silicon iron that has been given a particular treatment described by Goss,l has been studied by Goss, by Bozorth2 and by Sixtus,3 but their results do not agree and are almost entirely qualitative. The following pages give a description of the orientation of the crystals in the material as determined by means of X-rays and expressed graphically in a pole figure. The treatment consists of hot-rolling the material into strip and then giving it two cycles of cold reduction followed by recrystallization. This produces remarkably good properties in the rolling direction, the product having a maximum permeability in this direction of more than 25,000 and a permeability at 16,000 Gauss of more than 2200. It is now generally agreed that Goss's original conclusion1 that the crystals in the final product are randomly oriented was incorrect, since Bozorth2 and Sixtus,3 using different methods, have shown that there is a decided preference in orientation. Those writers, however, expressed their results only in terms of one or more ideal orientations with deviations therefrom. X-ray Data A strip of the material containing 3.1 per cent Si, prepared by Goss,† 1.2 by 0.0125 in., was etched rapidly in warm dilute hydrochloric acid until it was 0.005 in. thick, in order to eliminate the effect of the two surface layers. The specimen was then mounted in an integrating camera similar to one described in the literature.4 The purpose of this camera is to translate the specimen during exposure, so that a statistically large number of grains contribute to the pattern photographed. The camera also allows the plane of the specimen to make various angles with the X-ray beam. An area 5 by 1.2 in. was scanned by a beam of unfiltered radiation from a molybdenum target tube operating at 37 kv., and the measurements were made principally on the peak of the white radiation. X-ray photographs were taken at intervals of 15" in a plane