Ohmic Resistance Control For Copper Tarnishing Process

The reduction of copper sulfide and copper oxides originated during artificial tarnishing of copper was studied using potentiodynamic potential/current density experiments. Six copper surface treatments were considered: mechanical polishing; indoor exposure for 7 days; chemical etching in 1.6 M nitric acid; chemical etching and heating at 160°C; and chemical etching and dipping in a 9x10-4 M or 0.9 M potassium sulfide (1(25) solution at 70°C. Cuprite (Cu20) and chalcocite (Cu2S) were the main compounds formed. A linear relationship with the square root of the scan rate (v) was obtained by plotting the potentiodynamic potential/current density for the tarnish dissolution processes. A relationship between potential and current density cathodic peaks was not obtained, according to Müller's model, showing a proportionality factor with the dimensions of a resistance.