Nanoscale Materials Characterization by X-Ray Microanalysis with High Spatial Resolution

The scanning electron microscope (SEM) was primary developed for imaging applications. With the introduction of the Si(Li) energy dispersive spectrometer (EDS), simultaneous imaging and x-ray microanalysis became possible. However, long working distance and high current were needed because the position and small solid angle of the EDS detector. The high spatial resolution is generally obtained at short working distance with a SEM. Unfortunately x-ray microanalysis is never performed in the best imaging conditions. The annular silicon drift detector system is inserted below the objective lens which gives a higher solid angle (up to 1.3 sr). In consequence, a lower working distance and probe current can be used. An improved spatial resolution becomes possible during x-ray microanalysis. With this x-ray detector installed on a cold-field emission scanning electron microscope, quantitative x-ray microanalysis with high spatial resolution at low beam energy and low current becomes possible with the possibility of using the various different type of imaging at the same time. Also, since the count rate can be as high as 1,500 kcps, which lowers significantly the detection limit of elements as well as the minimum feature sizes of different phases that can be distinguished.