Microwave Dielectric Characterization of Silicon Dioxide

"The microwave dielectric properties of silicon dioxide at frequencies of 915 and 2450 MHz were characterized in the temperature range of 24 to approximately 1000 °C using the cavity perturbation technique. It is shown that the relative dielectric constant of silicon dioxide at both frequencies remains almost unchanged below 500 °C, above which there is a slight increase of 2%. The relative dielectric loss factor of silicon dioxide exhibits a strong temperature dependence above 500 °C and increases by approximately 7 and 5 times at 915 and 2450 MHz, respectively. The substantial increase in the relative dielectric loss factor is mainly attributed to the enhanced dielectric polarization and accelerated electrical transport in silicon dioxide at elevated temperatures.IntroductionSilicon dioxide (Si02) is usually considered a microwave transparent material due to its poor absorption capability at room temperature [1]. This characteristic has led to various applications of silicon dioxide in microwave processing of materials and communication. For instance, Si02 has been used to produce sample holders for microwave heating and substrates for electronic devices [2,3]. These applications generally require the material to withstand high temperatures under microwave irradiation. This indicates that microwave absorption capabilities of silicon dioxide at elevated temperatures are also important for its utilization.The microwave absorption capability of Si02 can be determined based on dielectric characterization (permittivity measurement) of the material at commonly used microwave frequencies, 915 and 2450 MHz, in a broad temperature range. To date, however, no detailed work on the dielectric properties (permittivity) of silicon dioxide at high temperatures has been reported. The present work is aimed to study the dielectric properties of silicon dioxide from room temperature to approximately 1000 °C at 915 and 2450 MHz. The results show that the permittivity of silicon dioxide has a strong temperature dependence above 500 °C, suggesting a substantial increase in its microwave absorption capability."