InxGa1-xAs Islands Grown on CaF2/Si(111) by Molecular Beam Epitaxy

"Preparation and growth processes of CaF2 on Si(111) and of . InxGa1-x,As islands on CaF2 by molecular beam epitaxy (MBE) are described. It was found that first of all the Si(111) surface treatment process to obtain the 7x7 reconstructed structure was necessary to ensure the cleanness of the surface and to grow a flat and high quality CaF2 on it. Growth of InxGa11-x,As islands on CaF2 was tried by droplet heteroepitaxy using the same MBE reactor. In,GaxGa1-xAs islands were successfully grown epitaxially, and the size and density of the islands dependent on the In composition were investigated.IntroductionThough semiconductor/semiconductor heterostructures are widely used for many device applications, small band off-sets of the conduction bands and the valence bands restrict the utilization of the intra-subband transitions to far-infrared regions. With InAs as the quantum well and fluorides as the barrier layers, we can design three-electronic-level systems in the infrared region, which is the low loss transmission window of the silica optical fibers. To realize those structures, we have grown InxGa1-xAs islands on CaF2 thin films that were epitaxially formed on Si(111) substrates by molecular beam epitaxy. By the droplet heteroepitaxy that we invented, the InxGa1-xAs islands with height of -10 nm have been obtained successfully. Optimum processing to obtain atomically smooth surfaces of Si and CaF2 and high quality InxGa1-xAs islands is reported.ExperimentsMBEMachineCaF2 was grown on Si(111) and InxGa1-xAs islands were grown on CaF2 successively by MBE. The MBE machine consisted of a growth (or reactor) chamber and a loading chamber. The reactor chamber was equipped with Ga, In, As and Er metal source cells and CaF2 and BaF2 source cells. Cell materials were P-BN for Ga, In and As metals, and were graphite for CaF 2, BaF 2 and Er to avoid reaction with BN cells. The electron gun and screen were attached to the reactor to observe the RHEED pattern during the substrate surface treatment and the growth of CaF2 and InxGa1-xAs islands. The substrate manipulator was designed to heat up the Si substrate up to 1,200°C for the surface cleaning. The QMS was also equipped to analyze the residual gas species in the reactor chamber. The base pressure of the reactor chamber was 2-5x10-11 Torr, being pumped by ion pump and the liquid nitrogen shroud"