Institute of Metals Division - Theory of the Influence of Stacking-Fault Width of Split Dislocations on High-Temperature Creep Rate

An explanation is advanced for the recent results of Barrett and Sherby on the high-temperature creep of fee metals. Their measurements indicate that metals with a low stacking fault energy creep at a much slower rate than metals with a high stacking fault energy. The explanation is based on the assumption that the rate of core diffusion is much smaller in partial dislocations than in perfect dislocations. An experiment is suggested to test this assumption. The explanation also requires that the jog density is small on widely split dislocations. SHERBY and Barrett1,2 recently established an important result in the field of high-temperature steady-state creep. They have shown that fee metals whose dislocations split into partial dislocations separated by a wide stacking-fault ribbon creep at a much slower rate than fee metals whose dislocations are not split appreciably. The creep rates in the two cases may differ by a factor as high as 6000. (For the purpose of comparison, the test temperature of each metal was chosen so that its rate of self-diffusion was equal to a standard value. Similarly the stress levels were such that the ratio of the stress to an appropriate elastic modulus was the same for each metal. In all cases the stresses were sufficiently low that the steady-state creep rate was proportional to the stress raised to a power.) It is the purpose of the present paper to attempt an explanation of this interesting and significant result of Sherby and Barrett. The activation energies of high-temperature creep of the metals tested by Sherby and Barrett (aluminum, nickel, copper, and silver) were equal to their self-diffusion activation energies. Hence it appears reasonable to assume that this type of creep is controlled by a dislocation-climb process, which in turn is controlled by the diffusion of vacancies to or from dislocation lines. (It will be assumed that the diffusion of interstitial atoms is unimportant in the climb process. The analysis could be repeated for the case in which interstitial atoms are important.) In prior papers374 I have treated dislocation climb by using the assumptions that core diffusion is extremely fast down a dislocation and that a dislocation always maintains an appropriate vacancy concentration in its immediate vicinity. In this