Institute of Metals Division - The Effective Atomic Radius of Silicon in Ternary Laves Phase Alloys (TN)

- Organization:
- The American Institute of Mining, Metallurgical, and Petroleum Engineers
- Pages:
- 1
- File Size:
- 57 KB
- Publication Date:
- Jan 1, 1965
Abstract
IN recent interesting papers,1,2 Bardos et al. have described ternary Laves phases of the type A2(BsSi) and A4(B5Si3) where A = titanium vanadium, niobium, and so forth, and B = manganese, iron, cobalt, or nickel; other more complex formulae have also been established. In these phases, silicon plays the part of the smaller B atom of a Laves phase AB2, and the interatomic distances show that the effec- tive silicon radii lie between 1.16 and 1.21Å, and are thus very much smaller than the metallic radius of silicon for CN = 12. It does not seem to have been pointed out that these small atomic radii are almost the sape as the normal covalent radius of silicon (1.174Å). If, therefore, silicon acts as an acceptor of electrons as suggested by Bardos et al.,1 it appears to do so, not by the building up of a negatively charged silicon ion which would be large, but by the formation of what are very nearly or may be actually normal covalent bonds. Since a covalent bond contains two electrons, its formation would reduce the number of electrons available for bonding in other parts of the structure, and in this way the effect of silicon in stabilizing the o phase at high electron concentrations might be understood.
Citation
APA:
(1965) Institute of Metals Division - The Effective Atomic Radius of Silicon in Ternary Laves Phase Alloys (TN)MLA: Institute of Metals Division - The Effective Atomic Radius of Silicon in Ternary Laves Phase Alloys (TN). The American Institute of Mining, Metallurgical, and Petroleum Engineers, 1965.