Institute of Metals Division - The Application of Piezoelectric Semiconductors to the Fabrication of High-Frequency Ultrasonic Transducers

The use of piezoelectric semiconducting materials for the fahrication of ultrasonic transducers has raised the upper fundamental frequency limit for transducers from about 200 mc to above 10 kmc, Several types of semiconductor transducer configurations have been proposed and examined experimentally. Depletion-layer transducers have been made and operated at frequencies below 1 kmc hut they appear to he better suited for operation at considerably higher frequencies around 10 knzc. Diffusion-layer transducers have been made and operated in the range 50 to 1000 mc and have exhihited considerably improved conversion losses and bandwidths compared with other transducers available in the frequency range. A variety of novel structures are possible using these new types of transducers, some of which could lead to substantial advances both in research and in the fabrication of ultrasonic delay lines and memory elements. THE field of ultrasonics today spans some five decades of the frequency spectrum from the audible to the kmc range and finds applications ranging from fundamental research into the atomic structure of matter to the degreasing of machine parts. To cover this wide range it has been necessary to develop a great many types of ultrasonic trandsucers utilizing a variety of materials and physical phenomena. The first ultrasonic transducers were made during World War I for a submarine-detection system. They consisted of plates of single-crystal quartz bonded between metal plates and were one of the first applications of the phenomenon of piezoelectricity discovered nearly 30 years previously. Despite the many advances which have been made in transducer technology, piezoelectric transducers using single-crystal quartz are still used almost exclusively for application above about 30 mc. Transducers at these frequencies are normally made in the form of thin quartz plates which are then bonded onto the medium in which the ultrasonic wave is to be propagated. The crystallographic orientation and geometry of these plates determines the type of wave generated and the way in which the efficiency of the electromechanical conversion varies with frequency. Analysis of the design parameters shows1 that the frequency of maximum efficiency (the fundamental or resonant frequency) is that frequency at which the transducer is approximately half the wavelength of the ultrasonic wave in the material. As the frequency increases, the ultrasonic wavelength, and therefore the optimum transducer thickness, decreases and in practice the fabrication of quartz transducers with fundamental freauencies above 100 mc becomes extremely difficult due to the extreme thinness required. For frequencies above 100 mc quartz transducers can be used in overtone-mode operation, and for very high frequencies (500 to 24,000 me) a technique using a quartz rod inserted in a high-Q microwave cavity4 is available. These techniques, however, exhibit comparatively low fractional bandwidths and rather poor conversion efficiencies. The present trend in ultrasonics is towards high frequencies and greater bandwidth to allow the use of shorter pulses which can give increased discrimination in radar-system delay lines and greater storage capacity in computer applications. The increasing demand for more efficient transducers with greater bandwidth