Institute of Metals Division - Kikuchi Electron-Diffraction and Dark-Field Techniques in Electron-Microscopy Studies of Phase Transformations

The analysis of Kikuchi pattersns of exct ovientalions from single cryslals and paired Kikuchi lines from single and overlapping crystals is shown to be useful and quanlitalve and is applied to Phase transfovnzcitions including ordering, spinodals, mavten-silic, and nuclealion and growth pyocesses. 112 pinciple, the analysis of exacl orientations enables the crystal system and the Bravais lattice of a crystal to he determined. The advantages of the davk-field imaging technigure for detecting vevy small precipitates are also described. ALTHOUGH Kikuchi electron-diffraction patterns were first observed nearly 40 years ago,' little systematic application seems to have been made of them, until fairly recently during electron microscopy, when their usefulness in contrast experimen and for determining exact orientations8'9 has been pointed out. With the availability of gonio-metric specimen tilting stages it has now become possible to make much wider use of diffraction patterns, particularly the Kikuchi pattern, which is the main subject of this paper. The treatment presented here is not exhaustive but it is hoped that it will stimulate more use of Kikuchi patterns during electron-microscopy investigations. The Kikuchi pattern is formed as a result of Bragg diffraction of the inelastically scattered electrons produced during the interaction of the beam and thick specimens, The important feature of these patterns is that they give an accurate representation of the symmetry of the crystal being investigated, so that it is possible to identify crystal systems and even the Bravais lattice. This means that new structures, e.g., formed in phase transformations, may be identified during normal electron microscopy, so that Kikuchi-pattern analyses considerably extend the uses of the electron microscope. Recent work has also shown that dark-field images are more informative than bright-field images, particularly, for observing small precipitates. The second part of this paper discusses some applications and advantages of dark-field imaging in studies of two-phase systems. 1) DIFFRACTION PATTERNS 1.1) Spot Patterns. Electron-diffraction spot patterns have their limitations because of the importance of the form factor on the intensities and shape of the reciprocal lattice points. Because of the extension of these points into relrods, reflections are possible over a large angular range (+5 deg) and the patterns from thin regions can be complicated because second-layer relrods intersect the reflecting sphere. Spot patterns can thus give only an approximate idea of the crystallography unless the foil is tilted into exact orientation. In this case the spot pattern is symmetrical, with equal numbers of spots on the positive and negative zone directions about the origin. Such cases are necessary for structural analyses and have been used recently to determine the crystal structure of the ordered Ta64C phase." Exact orientation means that the plane of the reciprocal lattice lies exactly normal to the incident beam as shown in Fig. 1(b). It should be noted that in exact orientations the angle of reflection is less than the exact Bragg angle 9 so that the reciprocal lattice points lie to the outside of the sphere, Fig. 1(b). This deviation is denoted by the parameter s and in the usual convention4 s is negative for exact orientations and, of course, zero at the exact reflecting position shown in Fig. l(a). In order to avoid secondary reflections from thickness relrods it is advantageous to work in thicker regions of foils. Diffraction from thick regions may also produce Kikuchi patterns and as dis-