Institute of Metals Division - Heteroepitaxial Silicon-Aluminum Oxide Interface, Part II – Orientation Relations of Single-Crystal Silicon on Alpha Aluminum Oxide

An analysis oj a series of samples of single -crystal silicon grown on sapphire shows that ,four distinct orientation relations exist. There are at least thirteen crystallographic planes which serve as substrates ,for epitaxial growth The model which assumes that silicon substitutes for aluminium and bonds with the oxygen atoms of the sapphire to form the first later for subsequent growth can account for the epitaxial geometry in all four cases. Multiplici-ties 01 specific orientations are found which are explained by the symmetry of both the sapphire and silicon crystal structures. It was reported in the previous paper' that single-crystal silicon films can be deposited on single-crystal a A1,03 (sapphire) with a wide variety of orientations. The silicon films, however, were found to deposit in only four different orientation relationships with respect to the sapphire substrate. The X-ray data have been analyzed to determine the plane and direction of atomic fit and an atomic model to account for the epitaxial relationships at the silicon-sapphire interface has been developed. These results are described in the present paper. EXPERIMENTAL The Laue X-ray data described in the previous paper were reduced to stereographic projections in a standard manner. These data were supplemented with X-ray reflection data obtained with -& E and A Full-Circle Goniometer (Electronics and Alloys, Inc.) mounted on a Phillips diffractometer unit. The silicon films were thin enough to result in characteristic reflections from the substrate as well as the silicon. The superimposed stereographic projections were analyzed to determine the orientation relationships. Ambiguities were resolved by referring to constructed models of various lattice planes for both silicon and sapphire. These lattice models were also used to develop the model for atom fit at the interface. DATA AND ANALYSIS 1) Crystal Structures. The crystallography of silico-n, which is of the diamond cubic class with a. = 5.4~, is straightforward. The sapphire structure is more complex and generally difficult to represent in pictorial form. It is of the rhombohedra1 class but usually referred to hexagonal axes. The transformation of indices between these two systems can lead to ambiguities which will have bearing on the analysis presented herein. Therefore, the basis used in this paper is described in the appendix. Referred to the hexagonal system, the parameters of sapphire are co = 12.95.&, a, = 4.75~, c/a = 2.73. All parameters are for room temperature. Figs. 1 and 2 illustrate schematically the hexagonal unit cell model of sapphire used for this analysis. The oxygen atoms are assumed to occupy positions in an idealized hexagonal array on basal planes. Their actual positions are in a slightly distorted hexagonal array. The aluminum-atom positions are scaled to their actual positions in the lattice with respect to the basal layers of oxygen atoms. It was found that an idealized model where the aluminum atoms are assumed to lie exactly at the octahedral interstices of the oxygen lattice, similar to that used by ~ronberg,' was not adequate for this study.