Institute of Metals Division - Electrical and Electro-Optical Properties of Interface-Alloy Heterojunctions

Epitaxial heterojunctions have been prepared by melting the lower -melting-point semiconductor of the interface between two dijferent semiconductors. when the temperature is reduced, the melted material recrystallizes, having alloyed into the higher -melting-point semiconditctor. The electrical and elcctro-optical properties of such single-crystal heterojunctions between GaAs and Gash and between p-type InAs and n-type Gash are the subject of this paper. The forward current varies as exp (AV), where A is substantially independent of temperatuve. For Gds-Gash heterojunctions at temperatures above, 370°K, if the current-voltage relationship were to he expressed as exp (qV/nkT), then n would he less than unity. The injection luminescence associated with forward current is, for the most part, characteristic. of the lower bandgap semicondutctor. These results can he explained by carrier injection into the lower bandgap semiconductor by tunneling through a barrier at the interface. The photovoltaic effect measured for incident photons having energies in the range between the bandgaps of the two semiconductors is much smaller than that produced by higher-energy photon The smallness of this between -the-gap photovoltaic response can he explained by the low probability for penetration of the barrier by the carriers produced in the smaller -bandgap semiconductor. THE technique of interface alloying has been used to produce single-crystal junctions between dissimilar semiconductors.' Oriented wafers are placed on a carbon heater strip, Fig. 1. so that semiconductor S1, which has the lower melting point, is supported by semiconductor S2. Electrical current passed through the heater strip produces a temperature gradient such that S2 is at a higher temperature than S1. As the temperature is raised the lower face of S1 begins to melt. Before the entire wafer can melt, however, the heater-strip current is turned off and, as illustrated in Fig. l. the melted portion recrystallizes, having alloyed into S2. Junctions have been fabricated by the above procedure between GaAs and germanium, between GaAs and GaSb, and between InAs and GaSb. Mroczkowski, Lavine. and Gatos have described the metallurgical and chemical aspects of the GaAs-Ge junction.2 The transition from GaAs to germanium is not monotonic and a portion of the recrystallized region consists of the GaAs-Ge eutectic. Since gallium is an acceptor and arsenic is a donor in germanium, since germanium dopes GaAs, and since the electrical properties of the GaAs-Ge eutectic have not been investigated, any interpretation of the electrical characteristics in terms of simple heterojunction theory would be incorrect. That the rectification of GaAs-Ge heterojunctions is not a property of the impurity doping of the GaAs or the germanium, but is most probably due to the impurity distribution in the recrystallized region, is clear from the fact that forward conduction occurred for all the GaAs-Ge interface-alloy junctions (whether they be n-n,n-p. p-n. or p-p) when the germanium was biased positively. The electrical characteristics of these GaAs-Ge heterojunctions will not be discussed further in this paper. Electron-beam microprobe analysis of GaAs-GaSb heterojunctions showed that the transition from arsenic to antimony atoms was without structure. and that the transition occurred within a 2 to 3 region.' In this paper we will describe the electrical properties of the GaAs-GaSb heterojunctions as well as electrical and electro-optical properties of the InAs-GaSb heterojunctions. A band model for the junction will be proposed which can explain these properties. ELECTRICAL PROPERTIES OF GaAs-GaSb HETEROJUNCTIONS After interface alloying. in preparation for the electrical and electro-optical experiments, ohmic contacts were made by conventional means. For example. Kovar tabs clad with tin were alloyed to n-GaAs or similar tabs clad with Au-Zn were alloyed to p-GaAs. The units were mounted and then etched. All four combinations of conductivity types