Infrared Radiation Properties of CuO-ZnO-Based Sintered Material Prepared for Energy-Saving Coating

"Application of high-emissivity coating on inner walls in industrial furnaces increases the furnace thermal efficiency. The coating with high emissivity strengthens radiation heat transfer in the furnace, however, according to Wien's displacement law and Planck's radiation law, under heating temperature, the wavelengths of the radiation transfer are mostly between 1-5 µm, implying that increasing emissivity of the coating in near infrared band is more effective for higher thermal efficiency. In this paper, a new CuO-ZnO-based coating material sintered at 1600K was developed. The emissivity of the samples were measured and the result shows that, in near-infrared band, the emissivity of the sample reaches 0.98 at 773K with 13at.% of CuO doped in ZnO. In addition, the effects of CuO doping and use temperature on emissivity were also discussed. Furthermore, crystallization behaviors of ZnO-CuO sintering were investigated by DTA,XRD and SEM-EDS etc., which offered information for possible optimal design of the material.1. IntroductionIndustrial furnaces are widely used in various industrial heating. For example, the metal smelting furnace, ore sintering furnace in metallurgical industry; the distillation furnace, cracking furnace in petroleum industry etc,. The research on efficient energy saving technology has important significance. High emissivity coatings are widely used in many high temperature applications to effectively transfer the heat by radiation [ 1]. The theoretical calculation and experimental studies have shown that, coated high emissivity coating in the heating surface is an effective method to enlarge the infrared radiation power [2].At present, the infrared high emissivity coating has been widely used in China, and have been achieved remarkable energy saving effect. According to Wien' s displacement law and Planck' slaw, most energy of the black body at high temperature is radiated in the wavelength range of l-5µm; however it happens that many materials have the low emissivity within this range. Thus, it is important to improve the near-infrared band emissivity of materials [3]."