Inductively Coupled Plasma Diamond Film Deposition

Diamond films have been successfully formed in an inductively coupled plasma (ICP) chemical vapor deposition (CVD) system from several gas mixtures: CH,-H,, C2112-112, and C2112-112-02' Our previous thermodynamic study indicated that the substrate temperature could be lowered by the presence of oxygen species at moderate system pressures (0.3-0.5 atm) and that higher volumetric growth rates required a high temperature source and a moderate pressure system in CVD processing. The principal experimental results were consistent with the thermodynamic predictions. The deposited films were characterized by laser Raman spectroscopy, scanning electron microscopy, and X-ray diffraction. The films were well faceted and uniform, with the growth rates over 10 pm/hr on molybdenum substrates. The crystal size ranged between 1 and 2 microns for a two hour experiment. It was possible to decrease the substrate temperature to below 800 °C in this system.