Imaging Techniques for the Characterization of Multi-Crystalline Silicon Bricks and Wafers

"Imaging techniques are applied to multi-crystalline silicon wafers and solar cells throughout the production process. Photoluminescence imaging, both band-to-band and defect-band, is used to characterize defects and wafer quality at all process steps. These steps include bricks sawn from ingots, wafer sawing, cleaning and texturing, emitter diffusion, edge isolation and glass removal, anti-reflective coating/passivation, and metallization of finished cells. Bricks, wafers, and cells can be imaged at a rate commensurate with in-line measurement, giving spatial information to characterize quality and defect content. Photoluminescence images on silicon bricks can be correlated to lifetime measured by photoconductive decay and could be used for high-resolution characterization of material before wafers are cut. The defect areas in as-cut wafers are compared to imaging results from electroluminescence and lock-in thermography, and cell parameters of near-neighbor finished cells, showing correlations to efficiency, open-circuit voltage, and short-circuit current.IntroductionImaging techniques can rapidly characterize material quality and defect density. Photoluminescence (PL) imaging can be applied to silicon from the brick level to all wafer process steps [1-8]. At the brick level, material thickness allows for measurement and correlation to lifetime where surface recombination effects are minimized [6, 7]. At the as-cut wafer level where thin unpassivated wafers prevent accurate lifetime assessment due to surfaces, defects can still be categorized and quantified to predict finished cell performance [3-5]. Defect regions can be identified by recombination-limited band-to-band PL or by defect-band emission [9-12]."