Forensic engineering and drive lifetime

Canadian Institute of Mining, Metallurgy and Petroleum
A. C. Stevenson
Organization:
Canadian Institute of Mining, Metallurgy and Petroleum
Pages:
3
File Size:
254 KB
Publication Date:
Jan 1, 2000

Abstract

"The most common theory is that, since thyristors, diodes, and insulated gate bipolar transistors (IGBTs) are “solid state” they will live forever. This is not so. They have wear-out mechanisms (e.g. insulation) and other mechanical parts such as motor bearings. These wear-out phenomena can be easily calculated. In this paper we will look at some of the failures and the failure rate of thyristors in power converters to see what affects them and to see what improvements can be made. If converter failures do occur, some simple forensic engineering steps will show if this is the root cause of the problem.IntroductionLook at the general failure rate curve for thyristors, diodes, gate turn off devices (GTOs) and IGBTs shown in Figure 1. We see that there is an initial high failure rate due to manufacturing defects, application problems, and drive start-up stresses that lasts for a few weeks. This is followed by a long period of (hopefully) several years with a relatively low but very slowly rising failure rate. At the end of this period, the devices start to wear out and the failure rate suddenly starts to increase rapidly over a few months. This signals the end of life for the devices in the system. We will start by looking at this end of life area."
Citation

APA: A. C. Stevenson  (2000)  Forensic engineering and drive lifetime

MLA: A. C. Stevenson Forensic engineering and drive lifetime. Canadian Institute of Mining, Metallurgy and Petroleum, 2000.

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