Fabrication Of Blue Light-Emitting Diodes Using GaN-Based Multiple Quantum Wells Grown By Metal Organic Chemical Vapor Deposition (Invited)

Plasma-induced damage of InGaN/GaN multiple quantum well (MQW) light-emitting diodes (LEDs) has been studied in terms of forward turn-on and reverse breakdown voltages, together with etch rate and surface morphology. The physical degradation of sidewall along with rough surface morphology of n-GaN caused by increased ion scattering induced the deterioration of the forward and reverse voltages. It was found that the turn-on voltage is sensitive to the surface roughness of the etched n-GaN and the breakdown voltage is strongly affected by the sidewall contamination. Annealing under nitrogen after the mesa etching improved the electrical properties of the InGaN/GaN MQW LEDs. Efficient blue light-emitting diodes (LEDs) were fabricated using InGaN/GaN triangular MQWs. The LEDs with triangular QWs showed a lower operation voltage and 2.4 times higher light output power than those with the rectangular MQW LEDs at 20 mA and 20 °C. The intensity of electroluminescence (EL) at 20 mA was almost independent of ambient temperature in the triangular QW LED, but decreased substantially in the rectangular one.