Effect of Impurities in Monocrystalline Silicon for Solar Cells

"A p-type Czochralski silicon ingot doped with boron was characterized for resistivity, minority carrier lifetime, interstitial oxygen, and metallic impurities. Analyses show a peak in resistivity and a dip in lifetime both occur 5 cm from the top of the ingot crown. This peak in resistivity deviates from the expected trend based on Scheil's equation for boron distribution. High concentration of interstitial oxygen in this area suggests that other oxygen-related defects, such as thermal donors and precipitates, may also be present here, and the observed peak in resistivity and dip in lifetime could be attributed to such defects. The low lifetime of 15-30 µs at minority carrier density of 7.5 x 1014 cm-3 is likely due to copper contamination.IntroductionSolar energy resources vastly exceed all other alternative energy resources, ensuring that solar power must play a crucial role in the evolving energy market. The economic viability of solar power in competition with other energy resources depends upon finding efficient, cost-effective, reliable, and controlled methods for solar cell production. In this regard, minimizing waste (such as material with unsuitable electrical properties that hinder solar cell performance) is a vital component of making solar cell manufacturing cost-effective. Impurities affect electrical properties of solar cell silicon in different ways (i.e. [1, 2, 3, 4, 5, 6]). In this work we focus on the role of oxygen and metallic impurities. Understanding oxygen impurities in silicon is critical to solar cell development because oxygen has been attributed with influencing critical electrical properties including resistivity and minority carrier lifetime and thereby potentially hindering solar cell performance or rendering material unsuitable for solar cells.[1, 2] Furthermore, oxygen is a common impurity in the standard type of solar cell silicon, Czochralski (CZ) silicon, due to diffusion of oxygen from the silica crucible into the melt during crystallization. [7] This study investigates the effects oxygen impurities have on the electrical properties of p-type CZ silicon."