Directional Growth Of Bulk Silicon From Silicon-Aluminum-Tin Melts

Molten Si-Al alloy, with the addition of Sn, was used for metallurgical grade Si purification by a low-temperature solidification method, with the aim of improving the recovery rate of Si. In this ternary melt, bulk Si was grown with a planar front by a directional solidification process under a well-controlled thermal gradient and growth rate conditions, thereby reducing the contamination of solvent metals. Effects of cooling rate, amount of Sn addition, and temperature gradient on the quality of bulk Si were determined. The criterion for constitutional supercooling for single-phase growth from multicomponent melts was employed to evaluate the growth process.