Communications - Dispersion Hardening of Titanium Carbide by Boron Doping

Single crystals of TIC doped with boron at high temperat~ires develop second-phase inclusions. The inclusions are in the form of lamellae lying parallel to {l 11 } planes of the Tic matrix and can be vevealed by etching [100] cleavage faces of the boron-doped Tic crystals. measurements of the critical resolved shear stress. t, of TIC crystals containing such inclusions showed that the ropid drop in t wilh increasing temperatu.ve found for pure Tic was greatly reduced. At 1600°C, the inclusion containing crystals had a value of t five limes that of pure Tic. The hardening effect also was found to inhibit hot pressing of TiC powders containing boron impurity. Thermochemical and crys-tallographic arguments suggest that the inclusions are TiB2. The boron content of the hardened carbide is a few tenths of 1 pct. TITANIUM carbide is noted for its high room-temperature hardness. However, measurements of the critical resolved shear stress, T, of single crystals of Tic at high temperatures have shown that t decreases exponentially with increasing temperature.' This temperature dependence of t is attributed to thermally activated dislocation mobility limited by a large Peierls stress.' In turn, this large Peierls stress is believed to be a consequence of strong co-valent and ionic binding in Tic. The rapid drop in 7 with increasing temperature, characteristic of pure Tic, is lessened by the introduction of second-phase inclusions. Exposure of Tic to boron at high temperatures produces such inclusions. A report of the influence of boron on t in Tic is presented, followed by a discussion of the nature and formation of boron-containing inclusions in Tic which are believed to be responsible for the hardening effect. I) CRITICAL RESOLVED SHEAR STRESS OF BORON-DOPED Tic CRYSTALS Tic single crystal boules grown by Union Carbide Corp., Linde Division, were doped with boron by placing them in a carbon crucible packed with boron powder and heating in a vacuum furnace to 2000°C for 1 hr. Samples 1 by 1 by 3 mm were cleaved from these doped boules. High-temperature compression tests' were made on these samples to determine the critical resolved shear stress as a function of temperature . The rapid drop in critical resolved shear stress found for pure Tic crystals' did not occur: tests indicated that the boron-doped crystals at 1600°C had values of T equal to those of pure Tic crystals heated to only 1100°C, Fig. 1. No difference in the shape of the individual stress-strain curves was produced by the boron doping, but the stress scale was multiplied by a large factor. The hardening effect of boron in Tic probably extends to temperatures lower than those used in the present work (1100°C minimum). At room temperature, however, the influence of boron is difficult to determine because the stress required for gross plastic flow in pure Tic is SO high that in practice fracture cccurs first. Microhardness is the only test that can give an indication of the yield stress in Tic at room temperature. such measurements were made5 on boron-doped Tic; the matrix had a hardness value