Chemical Vapor Deposition of Silicon Carbide by the MTS/Hydrogen System

The present work involves the study of Chemical Vapor Deposition (CVD) of silicon carbide from the methyltrichlorosilane (MTS) - hydrogen system. A computer program, SOLGASMIX has been employed to calculate the equilibrium compositions of the gaseous and condensed phases in the MTS - H2 system. The results indicate the range of parameters such as temperature, pressure and species concentrations, required to deposit the single phase Sic under thermodynamic equilibrium conditions. A mathematical model for describing the transport phenomena and the rate of deposition of Sic onto a thin rod in a vertically-oriented hot-walled CVD reactor has been developed. Exper iments were conducted using the same operating conditions as those used in the model in order to validate the mathematical predictions. The predicted rates of deposition were found to be in good agreement with those obtained experimentally. The model can be used to study the effects of various operating parameters on the rate of Sic deposition on a fiber.