Characterization of Amorphous Vacuum-Evaporated SnO2 Thin Films

"Tin oxide (SnU2) thin films of thicknesses in the range 100-600 nm were prepared on glass substrates by vacuum evaporation at ambient temperature. The films were characterized by transmittance measurements, X-ray diffraction (XRD), scanning electron microscope (SEM) observations and energy dispersion X-ray analysis (EDAX). It is found that the films have high transmittance and non sharp absorption edges. XRD diffractograms showed that the films are amorphous and the SEM micrographs showed that the surfaces are smooth, uniform and well covered with the material. The EDAX analysis showed that the films are deficient in oxygen. Indirect optical bandgap energy and Urbach tailing in the bandgap was observed, and the width of the tail, which is related with disorder and localized states, was estimated.IntroductionTin oxide is an n-type wide bandgap semiconducting material with a direct bandgap energy of 4 eV and an indirect bandgap of 2.6 eV [1], where inherent oxygen vacancies act as an n-type dopant [2], Tin oxide thin films have been used for transparent electrodes in photoelectric conversion devices namely amorphous silicon solar cells, liquid crystal displays, gas discharge displays, etc. [3]. Perfectly amorphous thin SnO2 films show good electrical response to reducing gases in air and could, hence, be applied to construct semiconductor gas sensors where the metal oxide films function as a monograin-eqivalent active layer [4]. Amorphous SnU2 can also be used in extended gate field-effect transistors (EGFET) as a pH sensor, where the sensitive part is made of the SnO2/Al structure. This device can be used to detect and to quantify any kind of substance that can produce or consume protons, like an enzymatic reaction, therefore showing a large range of applications as biosensors [5].There are different methods to prepare SnO2 films, such as atomic layer deposition (ALD) [6], reactive magnetron sputtering [7], chemical vapor deposition [8, 9], dip coating [10], spray pyrolysis (SP) [3, 11-14], and evaporation [8], The thermal evaporation method was chosen to produce SnO2 thin films in this work because deposition by this technique does not present any compositional problems. In addition, it is a low temperature technique, which increases the probability of producing amorphous films. To increase this probability, the films were deposited at ambient temperature."