Boron Removal In The Solidification Refining Of Si With Si-Al Melt

For the development of low-cost silicon refining process for solar cells, the present authors have been studying the low temperature refining technique, ?solidification refining of Si with Si-Al melts at 1173 ? 1273K?. In the present work, we have investigated the B removal in that refining, utilizing the segregation effect and also the effect of Ti addition to the melt. Segregation ratio of B between solid Si and Si-Al melt was measured by the temperature gradient zone melting technique and it indicated the B removal fraction would be as much as 90%. Titanium addition to the melt was found to produce the TiB2 precipitation with soluble B in that melt and bring the effective B removal of refined Si to its content of 1ppma.