Applications of Multi-Level Simulation of Bridgeman Growth of B-NiAI and CdTe Crystals

A unified computational model has been developed for the Bridgman growth processes of B-NiAI and CdTe crystals. To handle the geometrical and physical complexities, a two-level approach has been developed. At the gtobatlevel, conjugate heat transfer, phase change dynamics, and variable material properties along with the realistic geometries and thermal boundary conditions are accounted for inside the entire crystal growth system. Refined calculations are then made within the ampoule, with the boundary conditions supplied by the global simulations. This model can optimize the use of computational source, help understand solidification behaviors, and improve designs of crystal growth system.