Application of High Pressure Techniques for the Synthesis of Metastable Thin Film Oxides from Alloys of Si1-xGex

"High pressure vapor/solid reactions offer an opportunity for novel synthesis and processing of thin film materials and structures for electronic, optical, and magnetic applications. In this paper we review the use of two high pressure techniques that operate from 25 to 1000 atm (2.5 to 100 MPa) to fabricate thin film oxide structures from Si1-xGex deposited on Si wafers. High pressure synthesis enables temperature-independent control of reaction rates in the oxidation of this multicomponent semiconductor system and hence offers the opportunity to form thennodynamically metastable Si1-xGex<h from the alloy. The thermodynamics of the Si-Ge-0 system are reviewed and a method is described that utilizes selective chemical reduction (via H2 gas) of Si1-xGcx<h to form Ge precipitates in an SiO2 matrix. IntroductionAlloys of Si1-xGex grown epitaxially on Si substrates by chemical vapor deposition (CYD) and molecular beam epitaxy (MBE) have been used to create high performance microelectronic devices1. These devices show improved performance over conventional Si technology because they exploit the Si/Si 1-xGex band-gap discontinuity and take advantage of higher hole mobilities in the Ge containing alloys. While a range of devices based on heteroepitaxial systems have been demonstrated, the Si1_xGex alloys are of particular interest because they are most closely compatable with standard Si device processing. One disadvantage of Si-based materials systems is that they are not typically useful emitters of light. This is important since the use of light (rather than electrons) for transmitting and processing signals into, out of, and within Si-based microelectronics would represent a major technological advance in microelectronics-based communication and computer technologies. Nevertheless, through the use of innovative processing techniques it may be possible to use the Si1_xGex/Si heteroepitaxial system in integrated microelectronic/light-wave technologies."