Antireflective Silicon Nanostructures Fabricated by Cheap Chemical Etchant and Coated by Atomic Layer Deposited Al2O3 Layer

"In this paper, manganous nitrate [Mn(NO3)z] was used to assist the etching of silicon wafer in hydrofluoric acid (HF) for the antireflective application, and alumina (Al2O3) layer was deposited on the surface of the etched sample by atomic layer deposition method for further antireflection. The surface morphological and compositional studies of these samples were performed by scanning electron microscopy attached with an energy-dispersive X-ray spectrometer. The surface reflectance measurements were carried out using UV-Vis-NIR spectrophotometer. Binary structures of pyramids and nanopores were obtained by etching the alkaline textured monocrystalline silicon wafer in HF and Mn(NO3)z mixed solution for not more than 15 min. But excessive increase of etching time of up to 30 min resulted in the whole destruction of pyramids. The average reflectances of the 5-min-etched sample before and after being coated with 75-nm-thick Al2O3 layer are 4.62% and 3.47% in the range of 200-1000 nm, respectively.1. IntroductionAs we know, the reflectance of silicon wafer after being sliced is so high that the maximal photoelectric conversion efficiency of silicon based solar cells is limited. Therefore, alkaline texturization process was used for silicon solar cell in industrial production. But the reflectance of this alkaline textured wafer is still greater than 10% and this process can only be used for monocrystalline silicon solar cell."