Anion-Exchange Separation of Zirconium from Hafnium using a Multi-Column Method

"HfO2 is expected to be a gate dielectric used in ULSI alternatives to S1O2. Although the materials used in ULSI are required to be significantly pure, commercial Hf contains > 2 mass% Zr. It is important to establish a process for removing Zr from Hf. In the present study, anion-exchange separation using a multi-column method was employed. The separation tests were carried out at variety of temperatures and flow rates. The decrease in the flow rate of the mobile phase made the elution curves of both Hf(IV) and Zr(IV) broaden contrary to the case of Co(II), Cu(II), or Fe(III). This is caused by the difference in adsorption rate on the anion exchange resin. In addition, more than one column was connected in series in order to enhance the separation. As a result, the content of Zr(IV) was successfully reduced to 1/100 of that relative to the raw material.IntroductionHafnium is one of the most important materials in modem society. The main applications of Hf metal are as a control rod in a nuclear reactors because of its large neutron-capture cross-section and as an additive to various alloys because of its corrosion resistance [1]. In addition to those applications, attention has been recently paid to HfCh as a high-x"" dielectric used in ultra large scale integration, ULSI, as well as ZrCh, AI2O3 and La2C>3, which are expected to be alternatives to conventional S1O2 thin films [2].The materials used in ULSI are required to have a high purity in order to avoid unexpected errors due to impurities. Furthermore, high purity Hf is indispensable for investigating the intrinsic properties of Hf metal. Thus, it is significant to establish the purification process for Hf from both the industrial and academic perspectives."