An Investigation of the Photoluminescence and Transmittance of CdS1-x Tex Thin Films

"CdSi-xTex thin films were prepared by first producing CdS:In thin films by the spray pyrolysis (SP) technique and then annealing the films in the presence of Te vapor in nitrogen atmosphere. X-Ray diffraction (XRD) measurements showed that the films are polycrystalline with the wurtzite structure. Transmittance measurements were recorded at room temperature in the wavelength range 400-900 nm and used to deduce the absorbance. The first derivative of the absorbance was calculated and used to find the values of the bandgap energy, where more than one bandgap was obtained for each film. These results show that the films are inhomogeneous or the composition differs with location. The photoluminescence (PL) was recorded at T = 60 K and a deconvolution peak fit was performed for each spectrum. The results of the PL spectra are consistent with those obtained from the first derivative and confirm the inhomogeneity of the films.IntroductionPolycrystalline thin film CdS/CdTe solar cells are promising candidates for low cost and high efficiency photovoltaic applications. The CdS/CdTe interface plays an active role and a detailed knowledge of its properties is crucial for thorough understanding of the device. High efficiency devices have been obtained in spite of the large lattice mismatch (9. 7%) between hexagonal CdS and cubic CdTe. Interdiffusion at the CdS/CdTe interface is considered to affect the performance of the devices [1]. The formation of a mixed crystal or a graded layer at the interface causes a reduction in the lattice mismatch at the CdS/CdTe junction [2] and then a reduction in the number of interfacial states and recombination centers, thus enhancing the solar cell performance [3, 4].The objective of this work is to investigate the transmittance, photoluminescence (PL) and structure of CdSi-xTex thin films prepared by annealing the spray-deposited CdS:In thin films in the presence of tellurium vapor. X-ray diffraction (XRD) was used for exploring the structure. Transmittance is used to deduce the absorbance where its first derivative was used to find the bandgap energy which varies with composition. The evolution of the PL spectra as functions of tellurium concentration was evident and it confirmed the inhomogeneities of the films."