An Investigation into the Electrochemical Production of Si by the FFC Cambridge Process

"The FFC Cambridge process was suggested as a promising Si production technique for the expanding solar energy industry. Direct electrochemical reduction of bulk SiO2 plates and porous SiO2 pellets in molten CaCl2-NaCl salt mixture were investigated at 750°C by applying 2.8 V potential difference. The produced Si powder was brown and found to be contaminated by the Ni and stainless steel plates used as the cathode contacting materials. The reduction rates of the bulk SiO2 plates and porous SiO2 pellets were compared from variations of current and accumulative electrical charge that passed through the cell during the electrochemical reduction. The amorphous bulk SiO2 plates were reduced slightly faster than porous pellets of crystalline SiO2. The overall reduction potential of SiO2 pellets against the graphite anode at 750°C in molten CaCl2-NaCl salt mixture was determined as 2.3 V by cyclic voltammetry. This potential was supported by calculations.IntroductionMetallurgical grade Si cannot be directly used in electronic industry and some intermediate steps are required to produce industrial solar grade silicon (SOG-Si). A promising alternative solar grade silicon production technique is the FFC Cambridge Process [1]. Production of Si by electrochemical reduction of SiO2 at 850oC in molten CaCl2 electrolyte was first studied by Nohira et.al. [2]. In their study; Si formation was observed on bulk SiO2 cathodes after 1 hour of electrolysis. Complete electrochemical reduction of porous SiO2 pellets was first reported by Jin and his coworkers [3]. The mechanism of electrochemical reduction of SiO2 to Si in molten CaCl2 was explained in another study [4]. Reduction rates of bulk SiO2 and porous SiO2 pellets were also compared previously and it was found that reduction rates for bulk plates were higher [5]. Furthermore, it was reported that mixing Si into porous SiO2 pellet increased the reduction rate [5]. Mo [2, 4-7], Ni [3, 8, 9] or Si [6] were used as cathode contacting materials in various studies. Yasuda et. al. [6] produced Si with 99.80 % purity using Si plates as cathode contacting material to reduce metal contamination."