An Experimental and Computational Study of Directional Solidification in Transparent Materials

"An experimental and numerical study of the horizontal Bridgman growth of pure succinonitrile (SCN) and of a succinonitrile-1.0 mol. % acetone alloy (SCN-1.0 mol. % ACE) has been performed. Experiments at growth rates of 0, 2 and 40 µmis were investigated. The solid/liquid interface was stable (non-dendritic and non-cellular); however, it was not flat. Rather, it was significantly distorted by the influence of convection in the melt and, for the growth cases, by the moving temperature boundary conditions along the ampoule. For the alloy, the interface was determined to be unstable at growth rates greater than 2.8 µmis, but stable for the no-growth and 2 µmis growth cases. When compared to the pure SCN interface, the alloy interface forms closer to the cold zone,· indicating that the melting temperature has been suppressed by the addition of the alloying element. Two-dimensional computer simulations were performed for the no-growth case for both the pure and alloy materials. These simulations indicate that a primary longitudinal convective cell is formed in the melt. The maximum magnitude of velocity was calculated to be 1.515 mmls for pure SCN and 1. 724 mm/s for the alloy. The interface shape predicted by the computer simulation agrees well with the experimentally determined shape for the pure SCN case. In ongoing work, numerical simulations of the process during growth conditions are being performed.IntroductionIncreasingly, advanced materials used in the aerospace, automotive, optics and electronics fields require low levels of defects and high levels of solute uniformity. Directional solidification by the Bridgman process is widely used for synthesis of these high-quality materials. During Bridgman crystal growth, heat and mass transfer by both thermal and solutal gradient-driven convection and diffusion influence the shape of the solid/liquid interface and dopant segregation levels, and hence, directly determine the final crystal quality. Key process parameters include the applied furnace temperature distribution and rate of translation, ampoule properties and furnace orientation."