A Kinetic Study Of Copper Cementation On Pure Aluminum

The kinetics of copper cementation on a rotating disc of pure aluminum were studied as a function of chloride ion concentration, rotational speed of the aluminum disc, hydrogen ion concentration, copper ion concentration, and temperature. The optimum experimental conditions for all the parameters were determined. Chloride ion was found to destroy the naturally existing aluminum oxide film, and enabled the cementation reaction to proceed. A two-step rate, observed in most of the experiments, was attributed to the attainment of a roughened surface. An Evans diagram for the copper-pure aluminum system was constructed and utilized in predicting the controlling mechanism of the system. At low temperatures (<33°C), the rate with an experimental activation energy of 20.36 kcal mol- 1 was controlled by the presence of an oxide layer. While at higher temperatures presence of an oxide layer. While at higher temperatures (>33° mol- 1 was controlled by ionic diffusion. The deposits obtained were pure copper and not a copper-aluminum alloy. The amount of aluminum dissolved was determined for each experiment, and the maximum excess consumption was found to be only 40%. The structural characteristics of the copper deposits were studied using a scanning electron microscope. These observations indicated that the deposits were either bulbous, massive crystalline, or dendrites of different degrees of fineness depending on the experimental variables. The reaction rates seemed to depend on the deposit structures in a predictable way when a particular experimental parameter was varied.