A Computer Model for Chemical Vapor Deposition Processes and Predictions of a Silicon Deposition System

A general purpose computer model for describing the transport phenomena and resulting rate of deposition in Chemical Vapor Deposition (CVD) processes has been described. Partial differential equations describing the conservation of mass, momentum, energy and chemical species are solved by a computer program employing a finite volume method. The program allows for multiple chemical species and natural convection effects. In this paper, the deposition of silicon by the reaction of silicon tetrachloride and hydrogen in a vertical stagnation flow reactor with rotating substrate has been considered. The effects of reactor pressure and substrate rotation speed on the rate and uniformity of deposition have been studied. The predicted rates of silicon deposition along the substrate are in reasonable agreement with experimental results found in literature. The model can be used as a tool for design optimization of such reactors.