A Comparison Between the Properties of Spray-Pyrolyzed SnO2:F/CdS:Ln Structures Prepared by Using Nh4F And HF as a Source of Fluorine

"SnO2:F/CdS:In structures were prepared by the spray pyrolysis technique on glass substrates at a substrate temperature Ts = 450°C. NH4F and HF were both tried as the sources of fluorine in the precursor solution of SnO2:F. A comparison between the properties of structures obtained by using the two doping compounds was performed. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmittance measurements were used to characterize the films. The structures prepared by using HF as a fluorine source were found to have more ordered crystal growth, larger grain size and sharper absorption edge. From the inspection of the first derivative of the absorbance it is expected that more interdiffusion on the SnO2:F/CdS:In interface takes place in the structures made by using HF. These results confirm that these films are better as forecontacts for CdS/CdTe solar cells.IntroductionThin film CdS/CdTe solar cells built in the superstrate geometry rely on transparent conducting oxides (TCOs) to make the front contact The investigation of combined CdS-TCO films has recently been developed owing to the great interest of better understanding the effect of these bilayers on the absorbers [1]. Usually SnO2 is utilized as a front contact for these solar cells. Optimizing the properties of the SnO2/CdS structures is an important step on the way to get high performance CdS/CdTe solar cells.There are different methods to prepare SnOz thin films, such as reactive sputtering [2], evaporation [3], chemical vapour deposition [3, 4], dip coating [5] and spray pyrolysis [6-9]. At the same time CdS thin films can be prepared by different techniques such as chemical bath deposition [10], thermal evaporation [11], screen printing [12] and spray pyrolysis [7, 13]. However, the spray pyrolysis technique is a very low cost and simple technique that enables intentional doping and getting large area and uniform thin films [14]. For these reasons it is choused to prepare SnOz and CdS thin films in this work. To improve the properties of these compound semiconductors, SnOz was doped with fluorine and CdS was doped with indium where such doping is well known for these compounds."